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  sot-227b Datasheet PDF File

For sot-227b Found Datasheets File :: 102    Search Time::2.515ms    
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    IXFE55N50 IXFE50N50

IXYS Corporation
Part No. IXFE55N50 IXFE50N50
OCR Text ...ntrinsic Rectifier *Conforms to sot-227b outline Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space saving...
Description HiPerFETTM Power MOSFET

File Size 423.49K  /  2 Page

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    IXGN200N60A2

IXYS CORP
IXYS Corporation
Part No. IXGN200N60A2
OCR Text sot-227b, minibloc features
Description 200 A, 600 V, N-CHANNEL IGBT
Optimized for Switching

File Size 549.80K  /  5 Page

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    IXFE44N60

IXYS Corporation
Part No. IXFE44N60
OCR Text ...rce Features *Conforms to sot-227b outline *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) *Low package inductance *Fast intrinsic Rectifier Applications * DC-DC converters r...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET

File Size 81.86K  /  2 Page

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    IXFE23N100 IXFE24N100

IXYS Corporation
Part No. IXFE23N100 IXFE24N100
OCR Text ...W C C C C V~ V~ *Conforms to sot-227b outline *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) rated *Low package inductance *Fast intrinsic Rectifier Applications * DC-DC co...
Description Single MOSFET Die

File Size 423.74K  /  2 Page

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    MTE215N10E_D ON2531 MTE215N10E

Motorola, Inc
ON Semi
Part No. MTE215N10E_D ON2531 MTE215N10E
OCR Text ... 0.0055 OHM (R) 4 1 2 3 D sot-227b 1. 2. 3. 4. Source Gate Drain Source 2 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage -- Continuous Gate-Source...
Description TMOS POWER FET 215 AMPERES 100 VOLTS RDS(on) = 0.0055 OHM
From old datasheet system

File Size 226.46K  /  8 Page

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    MTE53N50E MTE53N50E_D ON2535 ON2534

MOTOROLA[Motorola, Inc]
ON Semi
Motorola Mobility Holdings, Inc.
Part No. MTE53N50E MTE53N50E_D ON2535 ON2534
OCR Text ...= 0.080 OHM (R) 4 1 2 3 D sot-227b 1. 2. 3. 4. Source Gate Drain Source 2 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage -- Continuous Gate-Source...
Description From old datasheet system
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 163.91K  /  8 Page

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    IXTN22N100L

IXYS Corporation
Part No. IXTN22N100L
OCR Text ... 300 s, duty cycle, d 2%. sot-227b (ixtn) outline (m4 screws (4x) supplied) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. ...
Description LinearTM Power MOSFET w/ Extended FBSOA

File Size 155.35K  /  5 Page

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    IXGN100N170

IXYS Corporation
Part No. IXGN100N170
OCR Text sot-227b, minibloc g = gate, c = collector, e = emitter
Description High Voltage IGBT

File Size 150.89K  /  5 Page

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    IXGN50N120C3H1

IXYS Corporation
Part No. IXGN50N120C3H1
OCR Text ... weight 30 g sot-227b, minibloc g = gate, c = collector, e = emitter
Description High-Speed PT IGBT for 20-50 kHz Switching
95 A, 1200 V, N-CHANNEL IGBT

File Size 186.28K  /  6 Page

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