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    IPW60R099CP SP000067147

Infineon Technologies AG
Part No. IPW60R099CP SP000067147
OCR Text ... g,typ 650 0.099 60 V nC PG-to247-3-1 Type IPW60R099CP Package PG-to247-3-1 Ordering Code SP000067147 Marking 6R099 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Condit...
Description CoolMOS Power Transistor

File Size 351.76K  /  10 Page

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    IPW60R165CP SP000095483

Infineon Technologies AG
Part No. IPW60R165CP SP000095483
OCR Text ...typ 650 V 0.165 39 nC PG-to247-3-1 CoolMOS CP is specially designed for: * Hard switching topologies, for Server and Telecom Type IPW60R165CP Package PG-to247-3-1 Ordering Code SP000095483 Marking 6R165P Maximum rat...
Description CoolMOS Power Transistor

File Size 351.64K  /  10 Page

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    IPW60R199CP SP000089802

Infineon Technologies AG
Part No. IPW60R199CP SP000089802
OCR Text ...typ 650 V 0.199 33 nC PG-to247-3-1 CoolMOS CP is specially designed for: * Hard switching topologies, for Server and Telecom Type IPW60R199CP Package PG-to247-3-1 Ordering Code SP000089802 Marking 6R199P Maximum rat...
Description CoolMOS Power Transistor

File Size 352.54K  /  10 Page

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    STC04IE170HV STC04IE170HV0611

STMicroelectronics
Part No. STC04IE170HV STC04IE170HV0611
OCR Text to247-4l hv tube stc04ie170hv emitter switched bipolar transistor esbt ? 1700v - 4a - 0.17 w general features high voltage / high current cascode configuration low equivalent on resistance very fast-switch, up to 150 khz squared rbs...
Description Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17

File Size 234.48K  /  11 Page

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    STC03DE170HV06 C03DE170HV

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STC03DE170HV06 C03DE170HV
OCR Text ...C European Directive 1 23 4 to247-4L HV Description The STC03DE170HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT to...
Description Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55 OHM

File Size 264.06K  /  11 Page

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    STC08IE120HP C08IE120HP

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STC08IE120HP C08IE120HP
OCR Text ...20HP Marking C08IE120HP Package to247-4LHP Packing Tube October 2006 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. W 0.10 Internal ...
Description Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm 发射极开关双极晶体管内酰胺酶1200 8A 0.10欧姆

File Size 269.96K  /  11 Page

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    STC08DE150HV C08DE150HV

STMICROELECTRONICS[STMicroelectronics]
Part No. STC08DE150HV C08DE150HV
OCR Text ...C European Directive 1 23 4 to247-4L HV Description The STC08DE150HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT to...
Description Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm

File Size 247.28K  /  11 Page

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    STC04IE170HV

STMicroelectronics
Part No. STC04IE170HV
OCR Text ...ctive 1 23 4 to247-4L HV Internal schematic diagrams Description The STC04IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. ...
Description Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W

File Size 234.46K  /  11 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STC03DE220HV C03DE220HV
OCR Text ...C European Directive 1 23 4 to247-4L HV Applications Aux SMPS for three phase mains Internal schematic diagrams Description The STC03DE220HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and ...
Description Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33OHM

File Size 124.26K  /  8 Page

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    PBYR4045WT PBYR4040WT

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. PBYR4045WT PBYR4040WT
OCR Text ...F(AV) = 40 A VF 0.58 V SOT429 (to247) DESCRIPTION a1 1 k2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switch...
Description Rectifier diodes Schottky barrier(????哄????娴?????)

File Size 55.34K  /  5 Page

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