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24113 GVXO753 SP5654 ZLNB2013 ON0810 70012 BA668A 380HB
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  transistor igbt n-chan 430v vb Datasheet PDF File

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    MID145-12A3 MII145-12A3

IXYS Corporation
IXYS, Corp.
Part No. MID145-12A3 MII145-12A3
Description 1200V igbt module
igbt Modules: Boost Configurated igbt Modules
igbt Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, n-chanNEL igbt

File Size 107.41K  /  4 Page

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    IXGT40N60B2 IXGH40N60B2

IXYS Corporation
Part No. IXGT40N60B2 IXGH40N60B2
Description igbt Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single igbt
75 A, 600 V, n-chanNEL igbt, TO-268AA
HiPerFAST igbt

File Size 575.14K  /  5 Page

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    IRG4PC50F IRG4PC50F-E

IRF[International Rectifier]
Part No. IRG4PC50F IRG4PC50F-E
Description 70 A, 600 V, n-chanNEL igbt, TO-247AC
70 A, 600 V, n-chanNEL igbt, TO-247AD
INSULATED GATE BIPOLAR transistor(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete igbt in a TO-247AC package

File Size 145.20K  /  8 Page

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    PM30RHC060

Powerex Power Semiconductors
Part No. PM30RHC060
Description transistor | igbt POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)
Intellimod-3 Modules: Three Phase Brake, igbt Inverter Output 30 Amp, 110-230 Volt Line

File Size 629.06K  /  10 Page

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    M57959 M57959L

MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
Part No. M57959 M57959L
Description Integrated Gate Bipolar transistor (igbt) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING igbt MODULES

File Size 23.82K  /  2 Page

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    GT5G102 GT5G1022-7B5C

Toshiba Semiconductor
Part No. GT5G102 GT5G1022-7B5C
Description INSULATED GATE BIPOLAR transistor SILICON N CHANNEL igbt STROBE FLASH APPLICATIONS
5 A, 400 V, n-chanNEL igbt

File Size 77.68K  /  3 Page

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    OM6517SA OM6517SW

International Rectifier
List of Unclassifed Manufacturers
Part No. OM6517SA OM6517SW
Description 1200V DISCRETE Hi-Rel igbt in a D3 package
INSULATED GATE BIPOLAR transistor (igbt) IN A HERMETIC TO-254AA PACKAGE

File Size 21.68K  /  2 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT5J301 GT5J301_07 GT5J30107
Description GATE BIPOLAR transistor SILICON N CHANNEL igbt
N CHANNEL igbt (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)

File Size 477.50K  /  7 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M57161L-01
Description Integrated Gate Bipolar transistor (igbt) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE igbt

File Size 112.05K  /  6 Page

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    IRF[International Rectifier]
Part No. IRG4PSH71UD
Description 99 A, 1200 V, n-chanNEL igbt, TO-274AA
INSULATED GATE BIPOLAR transistor WITH
1200V UltraFast 4-20 kHz CoPack igbt in a TO-274AA package

File Size 322.70K  /  10 Page

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For transistor igbt n-chan 430v vb Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

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