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  v 400v Datasheet PDF File

For v 400v Found Datasheets File :: 11267    Search Time::1.844ms    
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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 10 5 4 200 400 600 800 1000 1200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES ...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS v是一个高电压N新一代通道增强型功率MOSFET
POWER MOS v 500v 77A 0.050 Ohm

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    APT50M60JN

ADPOW[Advanced Power Technology]
Part No. APT50M60JN
OCR Text ...<0.5 % DUTY CYCLE NORMALIZED TO v = 10v @ 0.5 I [Cont.] GS D 120 6v 80 5.5v 80 4.5v 4v 0 50 100 150 200 250 vDS, DRAIN-TO-SOURCE vOLTAGE...400v 8 10 5 TJ =-55C 4 200 400 600 800 1000 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE C...
Description POWER MOS Iv 500v 71A 0.060 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS

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    APT8015JVFR APT8015

http://
ADPOW[Advanced Power Technology]
Part No. APT8015JvFR APT8015
OCR Text v (R) FREDFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimiz...400v TJ =+150C TJ =+25C 12 8 10 5 4 300 600 900 1200 1500 Qg, TOTAL GATE CHARGE...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS v 800v 44A 0.150 Ohm

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    APT8015 APT8015JVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8015 APT8015JvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v TJ =+150C TJ =+25C 12 8 10 5 4 300 600 900 1200 1500 Qg, TOTAL GATE CHARGE...
Description POWER MOS v 800v 44A 0.150 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS v是一个高电压N新一代通道增强型功率MOSFET

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    APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018JN
OCR Text ...<0.5 % DUTY CYCLE NORMALIZED TO v = 10v @ 0.5 I [Cont.] GS D 3.0 2.5 2.0 60 vGS=10v 40 TJ = +125C TJ = +25C 0 TJ = -55C vDS> I...400v 12 16 100 50 TJ =+150C TJ =+25C 8 TJ =-55C 10 5 4 200 400 600 800 1000 Qg,...
Description POWER MOS Iv 800v 40A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS

File Size 60.06K  /  4 Page

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    APT8028JVR APT5010JVR

ADPOW[Advanced Power Technology]
Part No. APT8028JvR APT5010JvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 10 5 8 4 150 300 450 600 750 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs ...
Description POWER MOS v 800v 28A 0.280 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT8030B2VR

ADPOW[Advanced Power Technology]
Part No. APT8030B2vR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v TJ =+150C TJ =+25C 12 8 10 5 4 100 200 300 400 500 600 Qg, TOTAL GATE CHAR...
Description POWER MOS v 800v 27A 0.300 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT8030JN APT8035JN

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8030JN APT8035JN
OCR Text ...<0.5 % DUTY CYCLE NORMALIZED TO v = 10v @ 0.5 I [Cont.] GS D 2.0 30 vGS=10v 1.5 vGS=20v 1.0 20 TJ = +125C TJ = +25C 0 TJ = -55C...400v 12 16 160 120 TJ =+150C TJ =+25C TJ =-55C 40 8 80 4 100 200 300 400 500 Qg...
Description POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; vARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET
N-CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS
POWER MOS v 800v 27.0A 0.30/0.35 Ohm

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    APT8030JVFR

ADPOW[Advanced Power Technology]
Part No. APT8030JvFR
OCR Text v (R) FREDFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimiz...400v TJ =+150C TJ =+25C 12 8 10 5 4 100 200 300 400 500 600 Qg, TOTAL GATE CHAR...
Description POWER MOS v 800v 25A 0.300 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT8030JVR

ADPOW[Advanced Power Technology]
Part No. APT8030JvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v TJ =+150C TJ =+25C 12 8 10 5 4 100 200 300 400 500 600 Qg, TOTAL GATE CHAR...
Description POWER MOS v 800v 25A 0.300 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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