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  w 4.1mm Datasheet PDF File

For w 4.1mm Found Datasheets File :: 6673    Search Time::4.14ms    
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    IRLML2402 IRLML6302 IRLML6402 IRLML5103 IRLML2803

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IRF[International Rectifier]
Part No. IRLML2402 IRLML6302 IRLML6402 IRLML5103 IRLML2803
OCR Text ...2 -55 to + 150 Units V A w w/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. 75 Max. 100 U...4.5V, ID = -3.7A 0.080 0.135 VGS = -2.5V, ID = -3.1A -0.55 -0.95 V V DS = VGS, ID = -250A --- ---...
Description HEXFET Power MOSFET
Power MOSFET(Vdss=-30V Rds(on)=0.60ohm)

File Size 80.72K  /  8 Page

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    IRLML2502 IRLML2502TR

International Rectifier
Part No. IRLML2502 IRLML2502TR
OCR Text ... 12 -55 to + 150 Units V A w w/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. 75 Max. 100 Unit...4.5V, ID = 4.2A 0.080 VGS = 2.5V, ID = 3.6A 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 4.0A...
Description HEXFETPower MOSFET
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package

File Size 123.54K  /  9 Page

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    IRLML2803 IRLML2803TR IRLML2803PBF

IRF[International Rectifier]
Part No. IRLML2803 IRLML2803TR IRLML2803PBF
OCR Text ...Typ. Max. 230 Units C/w 4/28/03 IRLML2803 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static D...
Description 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)

File Size 188.07K  /  9 Page

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    IRLML6401 IRLML6401TR IRLML6401PBF

International Rectifier
Part No. IRLML6401 IRLML6401TR IRLML6401PBF
OCR Text ... 8.0 -55 to + 150 Units V A w w/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. 75 Max. 100 U...4.5V, ID = -4.3A --- 0.085 VGS = -2.5V, ID = -2.5A --- 0.125 VGS = -1.8V, ID = -2.0A -0.40 -0....
Description -12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
HEXFETPower MOSFET
4.3 A, 12 V, 0.05 ohm, P-CHANNEL, Si, POwER, MOSFET

File Size 138.86K  /  9 Page

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    IRLML6402TR IRLML6402 IRLML6402PBF

IRF[International Rectifier]
Part No. IRLML6402TR IRLML6402 IRLML6402PBF
OCR Text ... 12 -55 to + 150 Units V A w w/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. 75 Max. 100 U...4.5V, ID = -3.7A 0.080 0.135 VGS = -2.5V, ID = -3.1A -0.55 -0.95 V VDS = VGS, ID = -250A --- --- ...
Description -20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package

File Size 128.61K  /  9 Page

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    IRLML5103 IRLML5103PBF IRLML5103TR

IRF[International Rectifier]
Part No. IRLML5103 IRLML5103PBF IRLML5103TR
OCR Text ...Typ. Max. 230 Units C/w 04/29/03 IRLML5103 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(...4 0.52 1.1 10 8.2 23 16 75 37 18 Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to ...
Description -30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)

File Size 190.06K  /  9 Page

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    IRLML5203

IRF[International Rectifier]
Part No. IRLML5203
OCR Text ...0 -55 to + 150 Units V A w mw/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 100 Units C/w w...4.5V, ID = -2.6A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.0A -1.0 VDS = -24V, VGS = 0...
Description HEXFET Power MOSFET
Power MOSFET(Vdss=-30V)

File Size 135.20K  /  9 Page

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    UPA1803 UPA1803GR-9JG PA1803

NEC Corp.
NEC[NEC]
Part No. UPA1803 UPA1803GR-9JG PA1803
OCR Text ... 32 2.0 150 -55 to +150 V V A A w C C Gate Protection Diode Source Gate Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Body Diode To...4.0 A VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V ID = ...
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SwITCHING

File Size 62.56K  /  8 Page

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    UPA1804 UPA1804GR-9JG PA1804

NEC Corp.
NEC[NEC]
Part No. UPA1804 UPA1804GR-9JG PA1804
OCR Text ... 32 2.0 150 -55 to +150 V V A A w C C Gate Protection Diode Source Gate Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Body Diode To...4.0 A VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V ID = ...
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SwITCHING

File Size 61.88K  /  8 Page

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For w 4.1mm Found Datasheets File :: 6673    Search Time::4.14ms    
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