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Macronix 旺宏
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| Part No. |
MX27C8111 27C8111
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| OCR Text |
x8/512K x16] CMOS OTP ROM WITH PAGE MODE * * * *
Completely TTL compatible Operating current: 60mA Standby current: 100uA Package type: - 4...1m x 8 or 512K x 16 organization +12.5V programming voltage Fast access time:90/100/120/150 ns Page ... |
| Description |
8M-BIT [1m x8/512K x16] CMOS OTP ROM
From old datasheet system
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| File Size |
87.82K /
14 Page |
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Macronix 旺宏
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| Part No. |
MX29F1610A_B 29F1610A
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| OCR Text |
x8/1m x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES * * * * * *
5V 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 70/90/120ns Sector erase architecture - 16 equal sectors of 128k bytes each ... |
| Description |
16M-BIT [2M x8/1m x16] CMOS
From old datasheet system
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| File Size |
219.76K /
38 Page |
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it Online |
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Macronix 旺宏
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| Part No. |
MX29F1611 29F1611
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| OCR Text |
...ABLE: BYTE Low places device in x8 mode. All data is then input or output on Q0-7 and Q8-14 float. AddressQ15/A-1 selects between the high and low byte. BYTE high places the device in x16 mode, and turns off the Q15/A-1 input buffer. Addres... |
| Description |
16M-BIT [2M x 8/1m x 16] CMOS
From old datasheet system
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| File Size |
196.16K /
36 Page |
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it Online |
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AMD Inc
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| Part No. |
AM29LV160B
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| OCR Text |
...ars on DQ15-DQ0; the byte-wide (x8) data appears on DQ7-DQ0. This device is designed to be programmed in-system with the standard system 3.0...1m x 16-Bit) CMOS Flash Memory 3.0 Volt-only Read, Program, and Erase office to confirm availability... |
| Description |
16 Mbit (2 M x 8-Bit/1 M x 16-Bit)
From old datasheet system
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| File Size |
319.39K /
47 Page |
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it Online |
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Macronix 旺宏
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| Part No. |
MX27C8100 27C8100
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| OCR Text |
x8/512K x16] CMOS OTP ROM
FEATURES
* * * * *
1m x 8 or 512K x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation Completely TTL compatible
* Operating current: 60mA * Standby c... |
| Description |
8M-BIT [1m x8/512K x16] CMOS OTP ROM
From old datasheet system
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| File Size |
85.84K /
14 Page |
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it Online |
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SAMSUNG
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| Part No. |
K6R4016V1D K6R4016V1D-TC10
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| OCR Text |
... 10 K6R4004V1D-JC(I) 08/10 512K x8 K6R4008C1D-J(T)C(I) 10 K6R4008V1D-J(T)C(I) 08/10 256K x16 K6R4016C1D-J(T,E)C(I) 10 K6R4016V1D-J(T,E)C(I,L,P) 08/10 VDD(V) 5 3.3 5 3.3 5 3.3 Speed ( ns ) 10 8/10 10 8/10 10 8/10 J : 36-SOJ T : 44-TSOP2
J :... |
| Description |
Description = K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating)
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| File Size |
144.31K /
12 Page |
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Microchip
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| Part No. |
93LC46A 21173E
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| OCR Text |
... device memory is configured as x8 (93LC46A) or x16 bits (93LC46B). Advanced CMOS technology makes these devices ideal for low power nonvola...1m Max. Vcc +1 Vcc +1 0.8 0.2 Vcc 0.4 0.2 -- -- 10 10 7 1.5 1 500 1 2 1 -- -- -- -- -- -- -- 400 100... |
| Description |
1K 2.5V Microwire ? Serial EEPROM
From old datasheet system
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| File Size |
108.15K /
12 Page |
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it Online |
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Microchip
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| Part No. |
93LC56B 93LC56A 21208B
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| OCR Text |
... device memory is configured as x8 (93LC56A) or x16 bits (93LC56B). Advanced CMOS technology makes these devices ideal for low power nonvola...1m
Max. Vcc +1 Vcc +1 0.8 0.2 Vcc 0.4 0.2 -- -- 10 10 7 1 500 1.5 1 2 1 -- -- -- -- -- -- -- 400 ... |
| Description |
2K 2.5V Microwire ? Serial EEPROM
From old datasheet system
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| File Size |
108.39K /
12 Page |
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it Online |
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SHARP
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| Part No. |
LH28F016SU LH28F016SUT-10
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| OCR Text |
x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 70 ns Maximum Access Time 0.32 MB/sec Write Transfer Rate 100,000 Erase Cycles per Bloc...1m x 16, 2M x 8) Flash Memory
56-PIN TSOP
TOP VIEW
INTRODUCTION
Sharp's LH28F016SU 16M Fla... |
| Description |
16M (1m x 16 , 2M x 8) Flash Memory
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| File Size |
218.70K /
37 Page |
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it Online |
Download Datasheet |
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