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EPS13 C5010 27000 2412W 1SMC50A 1N6302 2SD1664 50009
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  0.0068 Datasheet PDF File

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    Central Semiconductor
Part No. 2N6466 2N6467 2N4910 2N4911 2N6049 2N6261
OCR Text ... 2N6421 2N6422 IC (A) MAX 4.0 4.0 2.0 2.0 2.0 1.0 1.0 4.0 4.0 4.0 4.0 4.0 4.0 3.0 5.0 3.0 5.0 3.0 5.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 7.0 7.0 7.0 7.0 1.0 1.0 1.0 4.0 4.0 3.0 4.0 4.0 8.0 8.0 7.0 7.0 6.0 6.0 6.0 1.0 1.0 4.0 4.0 4.0 3.0 PD ...
Description Leaded Power Transistor General Purpose

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    SGS Thomson Microelectronics
Part No. 2N6490
OCR Text ...j Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE =-1.5V,R BE =100) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c 25 C Storage Temperature Max. O...
Description COMPLEMENTARY SILICON POWER TRANSISTORS

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    2SA1840

NEC
Part No. 2SA1840
OCR Text ...** Tj Tstg Ratings -100 -100 -8.0 - +5.0 - +10 -0.5 1.8 150 -55 to +150 Unit V V V A A A W C C * PW 300 s, duty cycle 10% ** Ta = 25C The information in this document is subject to change without notice. Before using this document, ...
Description Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

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    2SA1845

NEC
Part No. 2SA1845
OCR Text ...FE and low VCE(sat): VCE(sat) -0.3 V @IC = -3.0 A, IB = -0.15 A hFE 100 @VCE = -2.0 V, IC = -1.0 A * Fast switching speed ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage Collector to emitter voltage Emitter to...
Description Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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    2SA2075

Panasonic Semiconductor
Part No. 2SA2075
OCR Text ...ing (MT-4) 18.00.5 Solder Dip 0.650.1 2.50.1 1.20.1 1.480.2 90 Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.20.2 10.00.2 1.00.2 5.00.1 C 1.0 2.250...
Description SILICON PNP EPITAXIAL PLANAR TYPE

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    2SA2079

Panasonic Semiconductor
Part No. 2SA2079
OCR Text ...ature leadless package Package: 0.6 mm x 1.0 mm (hight 0.39 mm) 3 2 Unit: mm 1 1.000.05 0.600.05 0.39+0.01 -0.03 0.150.05 0.050.03 0.350.01 0.250.05 0.500.05 0.250.05 1 Absolute Maximum Ratings Ta = 25C Parameter Col...
Description SILICON PNP EPITAXIAL PLANAR TYPE

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    2SB1219 2SB1219A 2SD1820A 2SD1820

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1219 2SB1219A 2SD1820A 2SD1820
OCR Text ...g and the magazine packing. (0.425) 0.3+0.1 -0.0 3 0.15+0.10 -0.05 1.250.10 2.10.1 5 1 2 0.20.1 0 to 0.1 0.90.1 0.9+0.2 -0.1 (0.65) (0.65) 1.30.1 2.00.2 I Absolute Maximum Ratings Ta = 25C Parameter Collector to...
Description SILICON PNP EPITAXIAL PLANER TYPE

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    TE Connectivity, Ltd.
PANASONIC[Panasonic Semiconductor]
Part No. 2SB1371
OCR Text ...to +150 Unit V V V A A W C C 0.7 s Features 15.00.3 11.00.2 5.00.2 3.2 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collecto...
Description Silicon PNP triple diffusion planar type(For high power amplification) 6 A, 120 V, PNP, Si, POWER TRANSISTOR

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    2SB1668

Rohm
Part No. 2SB1668
OCR Text ...sions (Unit : mm) TO-220FN 10.0 4.5 3.2 2.8 Features 1) High hFE by darlington connection. 2) Built-in resistors between base and emitter. 3) Damper diode is incorporated. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 ...
Description FOR POWER AMPLIFICATION (-100V, -8A)

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    Panasonic
Part No. 2SB1722J
OCR Text 0.05 -0.03 1.000.05 3 1.600.05 0.85+0.05 -0.03 (0.375) 0.800.05 Unit: mm 0.12+0.03 -0.01 0 to 0.02 5 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emi...
Description Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

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