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For 1000-1200 Found Datasheets File :: 27202    Search Time::1.391ms    
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    CD293

ETC
Part No. CD293
OCR Text ...ified value shelf life + 8 5 1000 ? , ??? 30 , ? 24 ? : after storage for 1000 hours at +85 ,ur to be applied for 30 minutes and then r...1200 165 133 1.5 22 30 1500 133 107 1.7 25 25 1800 111 89 1.9 22 35 111 89 1.9 25 30 2200 91 73 ...
Description Aluminum Electrolytic Capacitor

File Size 495.59K  /  9 Page

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    Suntan
Part No. CD293
OCR Text ... 3300 1.8 2200 1.7 1500 1.6 1000 1.3 680 1.1 22x30 15000 3.2 10000 2.6 6800 2.3 3900 2.1 2700 1.9 2200 2.0 1200 1.5 820 1.2 22x35 18000 3.6 12000 2.9 8200 2.6 5600 2.3 3900 2.1 2700 2.2 1800 1.9 1200 1.6 22x40 22000 ...
Description ALUMINUM ELECTROLYTIC CAPACITOR

File Size 244.70K  /  3 Page

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    IXYS[IXYS Corporation]
Part No. MEA250-12DA MEK250-12DA MEE250-12DA
OCR Text ...2.0 V 2.5 10 0 100 40 20 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 80 C TVJ= 100C 70 VR = 600V Qr 60 200 A TVJ= 100C 180 VR = ...1200 ns 1000 trr 800 600 400 200 0 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 3 Peak reverse curren...
Description 1200V fast recovery epitaxial diode (FRED) module

File Size 52.78K  /  2 Page

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    WL2210-L

RFHIC
Part No. WL2210-L
OCR Text ... 22 - 30 ~ 1000mhz - 19 1000 ~ 2200mhz output ip3 dbm - 38 - 30 ~ 1000mhz - 33 - 1000 ~ 2200mhz noise figure db - 2.8 ...1200 1600 2000 nf(db) freq(mhz) frequency vs. p1db frequency vs. oip3 0 5 10 15 20 25 30 400 800 ...
Description Wideband LNA

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    MIO1200-33E10

IXYS Corporation
Part No. MIO1200-33E10
OCR Text ...er characteristics, chip level 1000 Cies 15 VCC = 2500 VGE [V] C [nF] 100 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV 10 Coes 10 5 Cres IC = 1200 A Tvj = 25 C 0 0 1 2 3 4 567 Qg [C] 8 9 10 11 12 1 0 5 10 15 20 VCE [V] 25 ...
Description IGBT Module Single switch

File Size 154.30K  /  6 Page

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    Motorola
Part No. MRF1570FT1
OCR Text ... 0.1 F, 100 mil Chip Capacitors 1000 pF, 100 mil Chip Capacitors 470 pF, 100 mil Chip Capacitors 110 pF, 100 mil Chip Capacitors 68 pF, 100 ...1200 1400 1600 VDD = 12.5 Vdc Pin = 36 dBm 600 800 1000 1200 1400 1600 IDQ, BIASING CURRENT (m...
Description RF Power Field Effect Transistors

File Size 548.68K  /  20 Page

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    UM1HLF-UM1SHLF-FAMILY

Wolfgang Knap
Part No. UM1HLF-UM1SHLF-FAMILY
OCR Text ...25.0 ? 25.0 -910 ? 900 to ? 1000 ? 900 to ? 1000 ? 900 to ? 1000 ? 910 ? 910 ? 910 ? 910 35 50 65 80 35 50 65 80 35 50 65 80 3...1200//3.0 1200//2.5 1500//2.5 1500//2.0 1500//1.0 2000//0.5 200//4.0 350//6.5 650//3.0 650//3.0 1200...
Description Monolithic Crystal Filters
   Monolithic Crystal Filters

File Size 103.98K  /  1 Page

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    Vishay Semiconductors
Part No. ST110S12P2VPBF ST110S12P2LPBF ST110S16P2VPBF
OCR Text ...ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum non-repe titive rate of rise of turned-...1200 1400 1600 1800 2000 2200 2400 110100 number of equal amplitude half cycle current pulses (n) pe...
Description Silicon Controlled Rectifier, 175 A, 1200 V, SCR, TO-209AC, ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-94, 3 PIN
Silicon Controlled Rectifier, 175 A, 1200 V, SCR, TO-209AC, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, TO-94, 3 PIN
Silicon Controlled Rectifier, 175 A, 1600 V, SCR, TO-209AC, ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-94, 3 PIN

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    IXYS[IXYS Corporation]
Part No. IXSN35N120AU1 SN35N120AU1
OCR Text ...seconds tfi - nanoseconds 1000 tfi 20 1000 tfi 17 Eoff - millijoules 750 15 750 16 500 Eoff 10 5...1200 QG - nanocoulombs VCE - Volts Fig.11 Transient Thermal Impedance 1 D=0.5 ZthjJC -...
Description High Voltage 1 GBT with Diode
High Voltage IGBT with Diode

File Size 98.07K  /  4 Page

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