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  10a 600v Datasheet PDF File

For 10a 600v Found Datasheets File :: 1872    Search Time::2.922ms    
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    SGB04N60 SGB04N6006

Infineon Technologies AG
Part No. SGB04N60 SGB04N6006
OCR Text ...10hz 100hz 1khz 10khz 100khz 0a 10a 20a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 .01a 0.1a 1a 10a dc 1ms 200 s 5...600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of...
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 785.93K  /  11 Page

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    SML10SIC06Y

Seme LAB
Part No. SML10SIC06Y
OCR Text ...orward current (t j = 175c) 10a i frm repetitive peak forward current (1) 67a i fsm surge peak forward current (2) 250a p d...600v 10 50 i r reverse current t j = 175c 20 200 a dynamic character...
Description SILICON CARBIDE (SiC) SCHOTTKY DIODE

File Size 158.25K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE5646
OCR Text .... . . . . . . . . . . . . . . . 10a Peak Surge (Non-Repetitive) On-State Current (One Cycle, at 50Hz or 60Hz), ITSM . . . . . . . 100A Peak ...600v, Note 1 IT = 10a, Note 1 Gate Open, Note 1 VD = 600v, Gate Open, TC = +110C, Note 1 Min - - - -...
Description TRIAC - Internally Triggered

File Size 18.12K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE5645
OCR Text 10a Isolated Tab Description: The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices...600v RMS On-State Current (TC = +75C, Conduction Angle of 180C), IT(RMS) . . . . . . . . . . . . . ....
Description TRIAC - 10a Isolated Tab

File Size 18.55K  /  2 Page

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    Icemos Technology
Part No. ICE10N60FP
OCR Text ... d v /d t v ds =480v, i d =10a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 power ...600v min r ds(on) v gs =10v 0.28 typ q g v ds =480v 41nc typ icemos and its ...
Description N-Channel Enhancement Mode MOSFET

File Size 517.36K  /  9 Page

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    Icemos Technology
Part No. ICE10N60
OCR Text ...t summary i d t a =25 o c 10a max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.28 typ q g v ds =480v 41nc typ icemos and its sister company 3 d semi own the fundamental patents ...
Description N-Channel Enhancement Mode MOSFET

File Size 551.81K  /  9 Page

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    SCS220AE2 SCS120AE2 SCS220AE2C

ROHM
Part No. SCS220AE2 SCS120AE2 SCS220AE2C
OCR Text ...ced temperature dependence 650v 10a/20a* v r i f q c l features 15nc 1) shorter recovery time a w symbol l construction silicon carbide epi...600v,tj=25c v 2 1.63 i f =10a,tj=175c v r =600v,tj=175c v 200 - - - 1.35 - - switching time tc - 15 ...
Description Switching loss reduced, enabling high-speed switching . (3-pin package)
   SiC Schottky Barrier Diode

File Size 248.18K  /  6 Page

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    Icemos Technology
Part No. ICE60N199
OCR Text ...y, single pulse e as i d =10a 520 mj avalanche current, repetitive i ar limited by t j max 10 a mosfet d v /d t ...600v, v gs =0v, t j =25 o c - 0.1 1 a v ds =600v, v gs =0v, t j =150 o c - - ...
Description Enhancement Mode MOSFET

File Size 780.66K  /  9 Page

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    SCS210AG

ROHM
Part No. SCS210aG
OCR Text ...ced temperature dependence 650v 10a v r i f q c l features 15nc 1) shorter recovery time a w symbol l construction silicon carbide epitaxia...600v,tj=150c - typ. unit max. min. - values 1.55 l electrical characteristics (tj = 25c) 600 v dc i...
Description Switching loss reduced, enabling high-speed switching . (2-pin package)
SiC Schottky Barrier Diode

File Size 241.62K  /  6 Page

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    Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK2761 2SK2761-01MR
OCR Text ...N-channel MOS-FET 600v 1 10a 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unle...
Description N-channel MOS-FET 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
 N-Channel Enhancement MOSFET 
From old datasheet system

File Size 299.65K  /  2 Page

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