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25deg Datasheet PDF File

For 25deg Found Datasheets File :: 425 Search Time::1.485ms
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				Mitsubishi Electric Semiconductor
Part No.	MGFS39E3336-01
OCR Text	...f=2.85V, Vcont=0V, Duty 50%, Ta=25deg.C Power Gain vs. Output Power 50 45 8 7 Gp (dB) 40 3.3GHz 3.4GHz 3.5GHz 3.6GHz EVM(%) 15 20 25 Output Power (dBm) 30 35 6 5 4 3 2 1 35 30 0 15 20 25 Output Power (dBm) 30 3...
Description	3.3-3.6GHz HBT Integrated Circuit
File Size	531.87K / 14 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGFS36E3436A MGFS36E3436A10
OCR Text	...stortion (dBc) Ta=-30deg C. Ta=+25deg C. Ta=+60deg C -10 3.5MHz offset -15 -20 Distortion (dBc) Ta=-30deg C. Ta=+25deg C. Ta=+60deg C 5MHz offset -25 -30 -35 -40 -45 -50 -55 10 12 14 16 18 20 22 24 26 28 30 Output Power (dB...
Description	3.4-3.6GHz HBT HYBRID IC
File Size	123.40K / 8 Page	View it Online	Download Datasheet

				TRANSYS Electronics Limited
Part No.	P2N2222A P2N2222
OCR Text	...s. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @Ta=25 degC Derate Above 25d...
Description	NPN SILICON PLANAR SWITCHING TRANSISTORS
File Size	80.03K / 3 Page	View it Online	Download Datasheet

				http:// Mitsubishi Electric Semiconductor
Part No.	RA03M4547MD RA03M4547MD-101
OCR Text	... RA03M4547MD Effi vs. Po T c=+25deg.C, Vdd=7.2V f=450MHz, Idq 1st stager=30mA Idq Final Stage=1.0A 50 45 40 Effi(%),Gp(dB) 35 30 25 20 15 10 Effi Gp T c=+25deg.C, Vdd=7.2V f=450MHz, Idq 1st stager=30mA Idq Final Stage=1.0A 0 -10 IMD3,I...
Description	RF MOSFET MODULE 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
File Size	134.49K / 7 Page	View it Online	Download Datasheet

				http:// Mitsubishi Electric Semiconductor
Part No.	RA03M3540MD RA03M3540MD-101
OCR Text	... RA03M3540MD Effi vs. Po T c=+25deg.C, Vdd=7.2V f=350MHz, Idq 1st stager=20mA Idq Final Stage=1.0A 50 45 40 Effi(%),Gp(dB) 35 30 25 20 15 10 -60 IMD3,IMD5(dBc) -20 -30 -40 -50 0 RA03M3540MD IMD3,IMD5 vs. Po T c=+25deg.C, Vdd=7.2V f=3...
Description	RF MOSFET MODULE 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
File Size	135.74K / 7 Page	View it Online	Download Datasheet

				TRANSYS Electronics Limited
Part No.	PN2222A PN2222
OCR Text	...s. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @Ta=25 degC Derate Above 25d...
Description	NPN SILICON PLANAR SWITCHING TRANSISTORS
File Size	81.26K / 3 Page	View it Online	Download Datasheet

				New Japan Radio Co., Ltd. NJRC[New Japan Radio]
Part No.	NJM2704V NJM2704 NJM2704PB1
OCR Text	...0 1 1 THD+N [%] Ta=75deg. Ta=25deg. Ta=-20deg. THD+N [%] 0.1 0.1 0.01 Ta=75deg. Ta=25deg. Ta=-20deg. 0.001 -50 -40 -30 -20 -10 0 10 0.01 -50 -40 -30 -20 -10 0 Input Voltage [dBV] Inpu...
Description	3D SURROUND AUDIO PROCESSOR FOR HEADPHONE 3D环绕耳机音频处理
File Size	176.65K / 11 Page	View it Online	Download Datasheet

				New Japan Radio Co., Ltd. NJRC[New Japan Radio]
Part No.	NJM2703RB2 NJM2703
OCR Text	...0 1 1 THD+N [%] Ta=75deg. Ta=25deg. Ta=-20deg. THD+N [%] 0.1 0.1 0.01 Ta=75deg. Ta=25deg. Ta=-20deg. 0.001 -50 -40 -30 -20 -10 0 10 0.01 -50 -40 -30 -20 -10 0 Input Voltage [dBV] Inpu...
Description	3D SURROUND AUDIO PROCESSOR FOR HEADPHONE 3D环绕耳机音频处理
File Size	176.70K / 10 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJM2701M NJM2701 NJM2701D
OCR Text	... BW=10 to 80KHz 1 1 Ta=25deg Ta=-40deg 0.01 THD+N [%] THD+N [%] 0.1 Ta=85deg 0.1 Ta=85deg Ta=25deg 0.01 Ta=-40deg 0.001 0.001 0.0001 -50 -40 -30 -20 -10 0 10 20 30 0.0001 -50 -4...
Description	3D SURROUND AUDIO PROCESSOR
File Size	200.28K / 11 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	MT4S34U
OCR Text	... MICROWAVE CHARACTERISTICS(Ta=25deg.) CHARACTERISTIC SYMBOL TEST CONDITION MIN. 15 TYP. 19 14 1.2 MAX. 17 TBD UNIT GHz dB dB Transition Frequency Insertion Gain Noise Figure fT S21e NF 2 VCE=2V VCE=2V VCE=2V IC=20mA IC=20m...
Description	SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS.
File Size	112.14K / 4 Page	View it Online	Download Datasheet

For 25deg Found Datasheets File :: 425 Search Time::1.485ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |