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  25v s Datasheet PDF File

For 25v s Found Datasheets File :: 37495    Search Time::1.921ms    
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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ... 10V, ID = 250A --- --- s VDs = 25v, ID = 85A --- 20 VDs = 75V, VGs = 0V A --- 250 VDs = 60V, VGs = 0V, TJ = 150C --- 200 VGs = 20V nA --- -200 VGs = -20V 210 320 ID = 85A 45 68 nC VDs = 60V 73 110 VGs = 10V 22 --- VDD = 38V 130 --- ID = 85...
Description Power MOsFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...Ds = VGs, ID = 250A --- s VDs = 25v, ID = 100A 20 VDs = 40V, VGs = 0V A 250 VDs = 32V, VGs = 0V, TJ = 175C 200 VGs = 20V nA -200 VGs = -20V 260 ID = 100A 63 nC VDs = 32V 59 VGs = 10V, see Fig. 6 and 13 --- VDD = 20V --- ID = 100A ns --- RG...
Description Power MOsFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOsFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOsFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOsFET(VDss=40V, RDs(ON)=0.004OHM, ID=170Aㄌ)
Power MOsFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOsFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.25v TOP 100 ID , Drain-to-source Current (A) 10 ID , Drain-to-source Current (A) 10 VGs 7....s Duty Factor 0.1 % 1.0 Fig 10a. switching Time Test Circuit VDs 0.0 25 50 75 100 125 150...
Description 20V single N-Channel HEXFET Power MOsFET in a sO-8 package
Power MOsFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...act s --- VGs = 0V --- pF VDs = 25v --- = 1.0MHz, see Fig. 5 --- VGs = 0V, VDs = 1.0V, = 1.0MHz --- VGs = 0V, VDs = 32V, = 1.0MHz --- VGs = 0V, VDs = 0V to 32V source-Drain Ratings and Characteristics Is IsM VsD trr Qrr ton Pa...
Description 40V single N-Channel HEXFET Power MOsFET in a TO-220AB package
AUTOMOTIVE MOsFET

File Size 138.67K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...TEsT CONDITIONs VGs = 0V, VDs = 25v, f = 1.0MHz, (Figure 11) MIN - TYP 600 180 52 5.0 MAX - UNITs pF pF pF nH Internal source...s source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTEs: ...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOsFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOsFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, si, POWER, MOsFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240sMD
OCR Text ... = 20V VGs = -20V VGs = 0 VDs = 25v f = 1MHz VGs = 10V VDs = 0.5BVDss ID = 13.9A 1 0.29 0.180 0.250 2 6.1 25 250 100 -100 1300 400 130 4 V / C W V s(W )W( VGs(th) Gate Threshold Voltage gfs IDss IGss IGss Ciss Coss Crss Qg Qgs...
Description &nbsp;&nbsp;&nbsp;N.CHANNEL POWER MOsFET
N-Channel Power MOsFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOs场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOsFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDs(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...TEsT CONDITIONs VGs = 0V, VDs = 25v, f = 1.0MHz (Figure 11) MIN - TYP 1300 320 69 5.0 MAX - UNITs pF pF pF nH Internal source Inductance Ls G Ls s 12.5 - nH Junction to Case Junction to Ambient RJC RJA Fr...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOsFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOsFETs

File Size 70.04K  /  7 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250sMD
OCR Text ... = 20V VGs = -20V VGs = 0 VDs = 25v f = 1MHz VGs = 10V VDs = 0.5BVDss ID = 22A 1 0.29 0.100 0.105 2 9 25 250 100 -100 3500 700 110 4 V / C W V s(W )W( VGs(th) Gate Threshold Voltage gfs IDss IGss IGss Ciss Coss Crss Qg Qgs Qgd...
Description N.CHANNEL POWER MOsFET

File Size 23.37K  /  2 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804s-7P
OCR Text ...r of die contact VGs = 0V VDs = 25v = 1.0MHz, see Fig. 5 G D s VGs = 0V, VDs = 1.0V, = 1.0MHz VGs = 0V, VDs = 32V, = 1.0MHz VGs = 0V, VDs = 0V to 32V Diode Characteristics Parameter Is IsM VsD trr Qrr Continuous source Cur...
Description AUTOMOTIVE MOsFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804s
OCR Text ...r of die contact VGs = 0V VDs = 25v = 1.0MHz, see Fig. 5 VGs = 0V, VDs = 1.0V, = 1.0MHz VGs = 0V, VDs = 32V, = 1.0MHz VGs = 0V, VDs = ...s D p-n junction diode. TJ = 25C, Is = 75A, VGs = 0V TJ = 25C, IF = 75A, VDD = 20V di/dt = 100A/s...
Description 40V single N-Channel HEXFET Power MOsFET in a D2-Pak package
40V single N-Channel HEXFET Power MOsFET in a TO-262 package
40V single N-Channel HEXFET Power MOsFET in a TO-220AB package

File Size 273.77K  /  12 Page

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For 25v s Found Datasheets File :: 37495    Search Time::1.921ms    
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