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  26.664 Datasheet PDF File

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    KTY81-152 KTY81-151 KTY81-150 KTY81-122 KTY81-121 KTY81-120 KTY81-110 KTY81-1

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. KTY81-152 KTY81-151 KTY81-150 KTY81-122 KTY81-121 KTY81-120 KTY81-110 KTY81-1
OCR Text ...e Semiconductors, SC17 1998 Mar 26 Philips Semiconductors Product specification Silicon temperature sensors DESCRIPTION The temper...664 726 792 861 934 1011 1050 1093 1182 1275 1372 1473 1578 1688 1802 1921 2041 2101 2160 2271 2367 ...
Description Silicon temperature sensors(纭??绱?俯搴?????)
Silicon temperature sensors(硅元素温度传感器)

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    KTY81-1SERIES KTY81-1SERIES_3 KTY81-1 KTY81-100

NXP Semiconductors
Philips
Part No. KTY81-1SERIES KTY81-1SERIES_3 KTY81-1 KTY81-100
OCR Text ...ion Supersedes data of 1998 Mar 26 2000 Aug 25 Philips Semiconductors Product specification Silicon temperature sensors DESCRIPTIO...664 726 792 861 934 1011 1050 1093 1182 1275 1372 1473 1578 1688 1802 1921 2041 2101 2160 2271 2367 ...
Description From old datasheet system
Silicon temperature sensors

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    RFMD[RF Micro Devices]
Part No. RF2459
OCR Text ...rent Consumption 2.7 3.0 20 3.6 26 V mA 8-98 Rev A2 010717 Preliminary Pin 1 Function LO IN Description Mixer LO single-ended input. The pin is internally DC blocked. External matching sets impedance. RF2459 Interface Schemat...
Description 3V PCS DOWNCONVERTER

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    FLK207XV

Eudyna Devices Inc
Part No. FLK207XV
OCR Text ... 32 P1dB 40 30 add 28 26 24 add 31 30 29 40 20 add (%) 20 10 16 18 20 22 24 26 Input Power (dBm) 28 8 9 ...664 .688 .709 .729 .748 .764 .780 .794 .806 .818 .829 .838 .847 .856 .863 .870 .876 .882 .887 .892 ....
Description GaAs FET & HEMT Chips

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    MRF182S MRF182

Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale Semiconductor, Inc
MOTOROLA[Motorola, Inc]
Part No. MRF182S MRF182
OCR Text ... 16 18 20 22 24 26 28 Pout, OUTPUT POWER (WATTS) VDS, SUPPLY VOLTAGE (VOLTS) Figure 4. Drain Efficiency versus O...664 |S22| S22 MRF182 5 -180 -179 -178 -178 -177 -176 -176 -175 -175 -174 -174 -173 -173 -1...
Description LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

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    RF2132PCBA RF2132

RFMD[RF Micro Devices]
Part No. RF2132PCBA RF2132
OCR Text ... Total Efficiency 50 10 0 28 26 24 22 20 18 16 14 12 10 0 Pout (dBm) 2-114 Rev B9 010417
Description LINEAR POWER AMPLIFIER

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    NE650103M

California Eastern Laboratories
ETC[ETC]
Part No. NE650103M
OCR Text ... + j0.23 2.64 + j0.75 2.54 + j1.26 ZLOAD () ) 5.60 - j5.02 4.94 - j3.49 4.32 - j2.22 5.50 - j5.58 5.36 - j5.07 5.16 - j4.59 Power Added E...664 168.308 167.842 167.763 167.195 166.953 166.278 166.119 165.605 165.134 164.845 164.526 164.073 ...
Description NECS 10 W L & S-BAND POWER GaAs MESFET

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    NEC Corp.
NEC[NEC]
Part No. NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text ...1 ANG 149.4 97.6 74.2 56.4 41.0 26.0 11.3 0.7 -2.0 -4.7 -7.9 -10.7 -13.3 -18.9 -25.3 -28.7 -32.3 -39.9 -47.9 -56.6 -66.1 -71.0 -76.6 -87.2 -...664 0.681 0.717 0.757 0.806 0.850 0.871 0.887 0.905 0.920 0.905 0.892 0.884 0.876 0.858 0.838 0.818 ...
Description 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET

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    RF3164

RF Micro Devices, Inc.
Part No. RF3164
OCR Text ...s otherwise specified). 1850 26 1910 28 -35 -40 40 460 -50.0 -55.5 -59.0 2:1 28 37 502 -46.0 -53.0 -56.0 6:1 10:1 MHz dB dBc dBc dBm % mA dBc dBc dBc No oscillation>-70dBc No damage At 80MHz offset. T=25oC Ambient, VCC =3.4V,...
Description 3V 1900MHz LINEAR POWER AMPLIFIER MODULE

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    RF3165 RF3165PCBA-410

http://
RF Micro Devices
Part No. RF3165 RF3165PCBA-410
OCR Text ...s otherwise specified). 1750 26 1780 28 -35 -40 40 460 -50 -55 -59 2:1 6:1 10:1 -138 28 MHz dB dBc dBc dBm % mA dBc dBc dBc No oscillation>-70dBc No damage At 90MHz offset. T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =2.8V, and...
Description 3V 1700MHz LINEAR POWER AMPLIFIER MODULE

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