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  2m-bit 256k x 8 cmos single vo Datasheet PDF File

For 2m-bit 256k x 8 cmos single vo Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    HM62256BLFP10 HM62256BLFP8 HM62256BLFP-4SLT

Hitachi Semiconductor
Part No. HM62256BLFP10 HM62256BLFP8 HM62256BLFP-4SLT
Description 32768-word x 8-bit high speed cmos static RAM, 45ns
IC-SM-256k cmos SRAM

File Size 144.47K  /  15 Page

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    BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI BS62LV2001SI BS62LV2001STC BS62LV2001STI BS62LV2001TC BS62LV2001SC BS6

Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
Part No. BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI BS62LV2001SI BS62LV2001STC BS62LV2001STI BS62LV2001TC BS62LV2001SC BS62LV2001SI-10 BS62LV2001TC-70 BS62LV2001TC-10
Description    Very Low Power/voltage cmos SRAM 256k x 8 bit
Very low power/voltage cmos SRAM 256k x 8 bit, 70ns
Very low power/voltage cmos SRAM 256k x 8 bit, 100ns

File Size 281.17K  /  10 Page

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    N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2BT2-70I

ON SEMICONDUCTOR
AMI[AMI SEMICONDUCTOR]
Part No. N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2BT2-70I
Description 256k x 16 STANDARD SRAM, 70 ns, PDSO44
4Mb Ultra-Low Power Asynchronous cmos SRAMs 256k 】 16 bit POWER SAVER TECHNOLOGY TM
4Mb Ultra-Low Power Asynchronous cmos SRAMs 256k × 16 bit POWER SAVER TECHNOLOGY TM

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    Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
Part No. AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM28F020-120EI AM28F020-120ECB AM28F020-120EIB AM28F020-120EEB AM28F020-200FI AM28F020-120FEB AM28F020-200FCB AM28F020-200FIB AM28F020-120FCB AM28F020-120FI AM28F020-200FEB AM28F020-150ECB AM28F020-70ECB AM28F020-70FEB AM28F020-90FE AM28F020-150FC AM28F020-150FCB AM28F020-70FCB AM28F020-90FC AM28F020-90EC AM28F020-90FEB AM28F020-150FEB AM28F020-70EI AM28F020-70EE AM28F020-70EIB AM28F020-150EIB AM28F020-90EIB AM28F020-200EIB AM28F020-120PCB AM28F020-120PIB AM28F020-120JCB AM28F020-90EE AM28F020-90PCB AM28F020-90FCB AM28F020-90PE AM28F020-200JIB AM28F020-200JCB AM28F020-70PCB AM28F020-200PIB AM28F020-200JEB AM28F020-150PI AM28F020-70FIB AM28F020-90PI AM28F020-90PIB AM28F020-150JE AM28F020-70PEB
Description 3 Megabit (256 K x 8-Bit) cmos 12.0 volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 2兆位56亩8位)的cmos 12.0伏,整体擦除闪存
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 256k x 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 256k x 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 2兆位256亩8位)的cmos 12.0伏,整体擦除闪存
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 256k x 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 256k x 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 256k x 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 256k x 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 256k x 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) cmos 12.0 volt, Bulk Erase Flash Memory 256k x 8 FLASH 12V PROM, 150 ns, PQCC32

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    http://
Integrated Device Technology, Inc.
Part No. IDT71V2576S IDT71V2578S IDT71V2578YS150BG IDT71V2578YS150BGI IDT71V2578YS150BQ IDT71V2576YSA133BQ IDT71V2576YSA133PFI IDT71V2576YSA150BQI IDT71V2576YSA133BQI IDT71V2576YSA150BG IDT71V2576YSA150PFI IDT71V2576YS150BGI IDT71V2576YS133BGI IDT71V2578SA150PFI IDT71V2576YS133PFI IDT71V2578YS150PFI IDT71V2578YS133PFI IDT71V2576YS150PF IDT71V2576YS150PFI IDT71V2576YS150BQI IDT71V2576YS133BQ IDT71V2578YSA133BQI IDT71V2578YSA150BG IDT71V2578YSA133PFI IDT71V2576YS133BQI IDT71V2578SA133BGI IDT71V2578S150PFI IDT71V2578YS133BGI IDT71V2578YS133BQI IDT71V2576SA133PF IDT71V2576SA133BGI IDT71V2576YS133BG IDT71V2578YS133BQ IDT71V2578YS133PF
Description 128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 256k x 18 CACHE SRAM, 4.2 ns, PBGA119
IC LOGIC 3253 LOW-voLTAGE DUAL 1-OF-4 FET MULTIPLExER/DEMULTIPLExER -40 85C TSSOP-16 96/TUBE 256k x 18 CACHE SRAM, 4.2 ns, PBGA119
RECTIFIER FAST-RECOVERY single 1A 200V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 5K/REEL-13 128K x 36 CACHE SRAM, 4.2 ns, PBGA165
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出,脉冲计数器,单周期取消
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 256k x 18 CACHE SRAM, 3.8 ns, PBGA119
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 256k x 18 CACHE SRAM, 4.2 ns, PBGA165
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 128K x 36 CACHE SRAM, 4.2 ns, PBGA119
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 128K x 36 CACHE SRAM, 4.2 ns, PBGA165
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 128K x 36 CACHE SRAM, 3.8 ns, PBGA165
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 128K x 36 CACHE SRAM, 3.8 ns, PBGA119
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 128K x 36 CACHE SRAM, 3.8 ns, PQFP100
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 256k x 18 CACHE SRAM, 4.2 ns, PQFP100
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 256k x 18 CACHE SRAM, 3.8 ns, PQFP100
128K x 36, 256k x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, single Cycle Deselect 128K x 36 CACHE SRAM, 4.2 ns, PQFP100
IC LOGIC 3257 LOW-voLTAGE 4-BIT 1-OF-2 FET MULTIPLExER/DEMULTIPLExER -40 85C QSOP-16 97/TUBE

File Size 285.60K  /  22 Page

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    爱普生(中国)有限公
Part No. E0C6SB32Q14 E0C6S32
Description 4-Bit Microcontroller
Advanced single-Chip cmos 4-Bit Microcomputer Consisting of the E0C6200A 4-Bit cmos Core CPU,SVD Circuit/Comparator,Event Counter(4位高级的、cmos、单片微型计算机(含4位E0C62000A中央处理器核SVD电路/比较事件计数器))

File Size 120.21K  /  12 Page

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    AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12RI AT49BV4096A-12TC AT49BV4096A-12TI AT49BV4096AT AT49BV4096AT-12RC AT49BV409

Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
Part No. AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12RI AT49BV4096A-12TC AT49BV4096A-12TI AT49BV4096AT AT49BV4096AT-12RC AT49BV4096AT-12RI AT49BV4096AT-12TC AT49BV4096AT-12TI AT49BV004 AT49BV004-12TC AT49BV004-12TI AT49BV004T AT49BV004T-12TC AT49BV004T-12TI
Description LM4250 Programmable Operational Amplifier; Package: SOIC NARROW; No of Pins: 8 256k x 16 FLASH 2.7V PROM, 120 ns, PDSO40
LM4308 Mobile Pixel Link Two (MPL-2) - 18-bit CPU Display Interface Master/Slave; Package: MICRO-ARRAY; No of Pins: 49 256k x 16 FLASH 2.7V PROM, 120 ns, PDSO40
4-Megabit 512K x 8/ 256k x 16 cmos Flash Memory 256k x 16 FLASH 2.7V PROM, 120 ns, PDSO48

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    Advanced Micro Devices, Inc.
Part No. AM29F400BT-90FC AM29F400BT-90EIB AM29F400BT-90SE
Description 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 5.0 volt-only Boot Sector Flash Memory 256k x 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 5.0 volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的cmos只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 5.0 volt-only Boot Sector Flash Memory 256k x 16 FLASH 5V PROM, 90 ns, PDSO44

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ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
Part No. AM29DL400BT-120FC AM29DL400BT-80FCB AM29DL400BT-90FCB AM29DL400BT-120FCB AM29DL400BT-70FCB AM29DL400BB-70EIB AM29DL400BB-80EIB AM29DL400BB-90EIB AM29DL400BB-120FIB AM29DL400BB-70FIB AM29DL400BB-80FIB AM29DL400BT-120FIB AM29DL400BT-70SCB AM29DL400BT-120EIB AM29DL400BB-90FIB AM29DL400BT-80SCB AM29DL400BB-80SIB AM29DL400BB-80SCB AM29DL400BB-90SIB AM29DL400BT-120SIB AM29DL400BT-90SCB AM29DL400BT-120SCB AM29DL400BB-120SIB AM29DL400BB-120SEB AM29DL400BB-90FEB AM29DL400BT-90EIB AM29DL400BB-90FC AM29DL400BB-90SC AM29DL400BT-90SIB AM29DL400BB-80FCB AM29DL400BT-70FIB AM29DL400BB-80EEB AM29DL400BB-80ECB AM29DL400BB-120FCB AM29DL400BB-70FC AM29DL400BB-70FCB AM29DL400BT-90ECB AM29DL400BT-70SIB AM29DL400BT-80EE AM29DL400BB-70EEB AM29DL400BB-70FE AM29DL400BB-120SC AM29DL400BT-120EE AM29DL400BT-70EEB AM29DL400BB-120EC AM29DL400BB-80SE AM29DL400BB-90ECB AM29DL400BB-90EEB AM29DL400BB-90FCB AM29DL400BT-80FIB AM29DL400BB-70SIB AM29DL400BB-120FE AM29DL400BB-70EC AM29DL400BT-70EC AM29DL400BB-90SEB AM29DL400BT-90SEB
Description 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 256k x 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 256k x 16 FLASH 3V PROM, 80 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 256k x 16 FLASH 3V PROM, 120 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的cmos只,同时作业快闪记忆
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 256k x 16 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 512K x 8 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 256k x 16 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 256k x 16 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 512K x 8 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 512K x 8 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 512K x 8 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 512K x 8 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 256k x 16 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 256k x 16 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 512K x 8 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) cmos 3.0 volt-only, Simultaneous Operation Flash Memory 512K x 8 FLASH 3V PROM, 120 ns, PDSO44

File Size 273.54K  /  42 Page

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    SHARP[Sharp Electrionic Components]
Part No. LH532100B- LH532100B-1 LH532100BD-1 LH532100BN-1 LH532100BS-1 LH532100BSR-1 LH532100BT-1 LH532100BU-1
Description cmos 2M(256k x 8) Mask-Programmable ROM
cmos 2M (256k x 8) MROM

File Size 78.17K  /  8 Page

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