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  4-mb 128k x 32 pipelined dcd s Datasheet PDF File

For 4-mb 128k x 32 pipelined dcd s Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    K7N403609B K7N403609B-QC20 K7N401801B-QC13 K7N401809B K7N401809B-QC20 K7N403601B-QC13

samsung semiconductor Co., Ltd.
sAMsUNG sEMICONDUCTOR CO. LTD.
sAMsUNG[samsung semiconductor]
samsung Electronic
Part No. K7N403609B K7N403609B-QC20 K7N401801B-QC13 K7N401809B K7N401809B-QC20 K7N403601B-QC13
Description 128kx36 & 256Kx18 pipelined NtRAMTM 128k × 36
128kx36 & 256Kx18 pipelined NtRAMTM

File Size 384.29K  /  18 Page

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    K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P403622M K7P403622M-H16 K7P403622M-H19 K7P403622M-H20 K7P401822B-HC16 K7P

samsung semiconductor Co., Ltd.
sAMsUNG sEMICONDUCTOR CO. LTD.
sAMsUNG[samsung semiconductor]
samsung Electronic
Part No. K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P403622M K7P403622M-H16 K7P403622M-H19 K7P403622M-H20 K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC16 K7P403622B-HC20 K7P403622B-HC25
Description 128kx36 & 256Kx18 synchronous pipelined sRAM 128k × 36
128kx36 & 256Kx18 synchronous pipelined sRAM

File Size 239.13K  /  12 Page

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    Cypress semiconductor Corp.
Cypress semiconductor, Corp.
Part No. CY7C1350B-133AI CY7C1350B-133AC CY7C1350B-166AC
Description 128kx36 pipelined sRAM with NoBL Architecture 128k x 36 ZBT sRAM, 3.5 ns, PQFP100

File Size 201.27K  /  14 Page

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    MCM63Z818TQ100R MCM63Z818TQ100 MCM63Z818TQ133R MCM63Z736 MCM63Z736TQ133 MCM63Z736TQ133R MCM63Z818TQ133 MCM63Z736TQ100 MC

Motorola, Inc
MOTOROLA[Motorola Inc]
Part No. MCM63Z818TQ100R MCM63Z818TQ100 MCM63Z818TQ133R MCM63Z736 MCM63Z736TQ133 MCM63Z736TQ133R MCM63Z818TQ133 MCM63Z736TQ100 MCM63Z736TQ100R
Description 128k x 36 and 256K x 18 Bit pipelined ZBT RAM synchronous Fast static RAM

File Size 219.97K  /  20 Page

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    CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV25-167AC CY7C1372CV25-167BGC CY7C1370CV25-250BZI CY7C1372CV25-250BZI CY

Cypress semiconductor, Corp.
Cypress semiconductor Corp.
Part No. CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV25-167AC CY7C1372CV25-167BGC CY7C1370CV25-250BZI CY7C1372CV25-250BZI CY7C1370CV25-225AC CY7C1372CV25-225AC CY7C1370CV25-225AI CY7C1372CV25-225AI CY7C1370CV25-225BGC CY7C1372CV25-225BGC CY7C1372CV25-225BGI CY7C1372CV25-225BZC CY7C1372CV25-250BGC CY7C1372CV25-200BGC CY7C1370CV25-167BZI CY7C1370CV25-225BGI CY7C1370CV25-167BGI CY7C1370CV25-250BGI CY7C1370CV25-200BGI CY7C1370CV25-225BZC CY7C1370CV25-250BGC CY7C1370CV25-250AC CY7C1370CV25-250AI CY7C1370CV25-167BGC CY7C1370CV25-200BGC CY7C1370CV25-167BZC CY7C1370CV25-167AC CY7C1370CV25-167AI CY7C1370CV25-200AC CY7C1370CV25-200BZC CY7C1372CV25-225BZI CY7C1372CV25-200BGI CY7C1372CV25-200BZI CY7C1372CV25-200AI
Description 512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 1M x 18 ZBT sRAM, 3 ns, PQFP100
512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 1M x 18 ZBT sRAM, 3 ns, PBGA165
512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 1M x 18 ZBT sRAM, 3 ns, PBGA119
512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 1M x 18 ZBT sRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 1M x 18 ZBT sRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 512K x 36 ZBT sRAM, 3 ns, PBGA165
512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 512K x 36 ZBT sRAM, 3 ns, PQFP100
512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 512K x 36 ZBT sRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 512K x 36 ZBT sRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 pipelined sRAM with NoBLArchitecture 12k × 36/1M × 18流水线的sRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,x7R-TC Code,-15,15%-TC,30ppm-TC RoHs Compliant: Yes
512K x 36/1M x 18 pipelined sRAM with NoBL Architecture

File Size 498.10K  /  27 Page

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    Integrated Device Technology, Inc.
http://
Integrated Device Techn...
Part No. IDT71V3576Ys133BG IDT71V3576Ys133BGI IDT71V3578Ys133BGI IDT71V3576Ys133BQ IDT71V3578Ys133BQ IDT71V3578Ys133BQI IDT71V3576Ys133PF IDT71V3578Ys133PF IDT71V3576Ys133PFI IDT71V3578s150BQ IDT71V3578s133PFI
Description 128k x 36, 256K x 18 3.3V synchronous sRAMs 3.3V I/O, pipelined Outputs Burst Counter, single Cycle Deselect 256K x 18 CACHE sRAM, 3.8 ns, PBGA165

File Size 285.54K  /  22 Page

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    AMIC Technology Corporation
Part No. A65H73361P-7 A65H73361P-6 A65H83181P-6 A65H83181P-7 A65H73361sERIEs A65H83181sERIEs A65H73361P-5 A65H83181P-5 A65H73361 A65H83181
Description &nbsp;&nbsp;&nbsp;128k x 36 & 256K x 18 Late Write synchronous Fast sRAM with pipelined Data Output

File Size 534.74K  /  21 Page

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    K7A403609A K7A401809A K7A403609B

samsung Electronic
sAMsUNG[samsung semiconductor]
Part No. K7A403609A K7A401809A K7A403609B
Description 256K x 18-Bit synchronous pipelined Burst sRAM Data sheet
128k x 36-Bit synchronous pipelined Burst sRAM Data sheet
128kx36 & 256Kx18-Bit synchronous pipelined Burst sRAM
128kx36/x32 & 256Kx18 synchronous sRAM

File Size 461.50K  /  17 Page

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    Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Part No. IDT71V35761 IDT71V35761Ys200BG IDT71V35761Ys200BGI IDT71V35761Ys200BQ IDT71V35761YsA200BGI IDT71V35761YsA200BQI IDT71V35761Ys200BQI IDT71V35781Ys200BG IDT71V35761YsA200PF IDT71V35761YsA200PFI IDT71V35781YsA200BG IDT71V35781YsA200BGI IDT71V35761Ys166BGI IDT71V35761Ys183BGI IDT71V35761s200PFI IDT71V35761s166PFI IDT71V35781Ys200BGI IDT71V35761sA183PF IDT71V35761s183PFI IDT71V35761sA183PFI IDT71V35781Ys200BQ IDT71V35781Ys200BQI IDT71V35761sA166PF IDT71V35761YsA166PF IDT71V35761YsA166PFI IDT71V35761YsA183PF IDT71V35761YsA183PFI IDT71V35781YsA166PF IDT71V35781sA166PFI IDT71V35781s166PF IDT71V35781s166PFI IDT71V35761YsA183BG IDT71V35761YsA183BQ IDT71V35761YsA183BGI IDT71V35761YsA183BQI IDT71V35761YsA166BQI IDT71V35781Ys166PFI IDT71V35761Ys183PFI IDT71V35761Ys166PF IDT71V35781Ys183PF IDT71V35781Ys183PFI IDT71V35761Ys166PFI IDT71V35781Ys183BQI IDT71V35781YsA183BQI IDT71V35761sA200BQI IDT71V35761sA200BGI IDT71V35761s166BG IDT71V35761s166BGI IDT71V35761s166BQ IDT71V35761s166BQI IDT71V35761Ys166BQI IDT71V35781sA200BQ IDT71V35781YsA200PFI IDT71V35781YsA200BQ
Description CABLE, COAx, RG58, LsF, BLACK, 100M; Length, Reel (Imperial):328ft; Attenuation, 1 GHz:50.0dB; Attenuation, 10 MHz:4.5dB; Attenuation, 200 MHz:22.0dB; Attenuation, 400MHz:32.0dB; Capacitance:100pF/m; Conductor make-up:19/0.18 mm; RoHs Compliant: Yes
CABLE, COAx, RG5900, WHITE, 100M; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; Colour, primary insulation:White; RoHs Compliant: Yes
CABLE, COAx, RG5900, BLACK, 500M; Length, Reel (Imperial):1640.4ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; RoHs Compliant: Yes
CABLE, COAx, RG59, LsF, BLACK, 100M; Length, Reel (Imperial):328ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; RoHs Compliant: Yes
CABLE, COAx, RG58, LsF, BLACK, 500M; Attenuation, 1 GHz:50.0dB; Attenuation, 10 MHz:4.5dB; Attenuation, 200 MHz:22.0dB; Attenuation, 400MHz:32.0dB; Capacitance:100pF/m; Conductor make-up:19/0.18 mm; Diameter, External:4.95mm; RoHs Compliant: Yes
CABLE, COAx, RG5900, WHITE, 500M; Length, Reel (Imperial):1640.4ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; RoHs Compliant: Yes
CABLE, COAx, TWIN, BLACK, COMP, 100M; Length, Reel (Imperial):328ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 300 MHz:21.2dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 RoHs Compliant: Yes
CABLE, COAx, RG59, LsF, BLACK, 500M; Length, Reel (Imperial):1640.4ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; RoHs Compliant: Yes
CHOKE COIL 1000UH 410MA sMD
CHOKE COIL 180UH 930MA sMD
RECTIFIER FAsT-RECOVERY sINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 5K/AMMO
128k x 36, 256K x 18 3.3V synchronous sRAMs 3.3V I/O, pipelined Outputs Burst Counter, single Cycle Deselect 256K x 18 CACHE sRAM, 3.5 ns, PQFP100
128k x 36, 256K x 18 3.3V synchronous sRAMs 3.3V I/O, pipelined Outputs Burst Counter, single Cycle Deselect 128k x 36 CACHE sRAM, 3.3 ns, PQFP100
128k x 36, 256K x 18 3.3V synchronous sRAMs 3.3V I/O, pipelined Outputs Burst Counter, single Cycle Deselect 128k x 36 CACHE sRAM, 3.5 ns, PQFP100
128k x 36, 256K x 18 3.3V synchronous sRAMs 3.3V I/O, pipelined Outputs Burst Counter, single Cycle Deselect 256K x 18 CACHE sRAM, 3.3 ns, PQFP100
RECTIFIER FAsT-RECOVERY sINGLE 3A 800V 150A-ifsm 1.7V-vf 75ns 5uA-ir DO-201AD 5K/REEL-13 256K x 18 CACHE sRAM, 3.3 ns, PBGA165
128k x 36/ 256K x 18 3.3V synchronous sRAMs 3.3V I/O/ pipelined Outputs Burst Counter/ single Cycle Deselect
RECTIFIER FAsT-RECOVERY sINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK 256K x 18 CACHE sRAM, 3.3 ns, PBGA165
128k x 36, 256K x 18 3.3V synchronous sRAMs 3.3V I/O, pipelined Outputs Burst Counter, single Cycle Deselect 128k的3656 × 18 3.3同步sRAM.3V的I / O的输出脉冲计数器流水线,单周期取
128k x 36, 256K x 18 3.3V synchronous sRAMs 3.3V I/O, pipelined Outputs Burst Counter, single Cycle Deselect 128k x 36 CACHE sRAM, 3.5 ns, PBGA165
128k x 36, 256K x 18 3.3V synchronous sRAMs 3.3V I/O, pipelined Outputs Burst Counter, single Cycle Deselect 256K x 18 CACHE sRAM, 3.1 ns, PBGA165
128k x 36, 256K x 18 3.3V synchronous sRAMs 3.3V I/O, pipelined Outputs Burst Counter, single Cycle Deselect 128k x 36 CACHE sRAM, 3.1 ns, PBGA165

File Size 285.86K  /  22 Page

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    Motorola Mobility Holdings, Inc.
MOTOROLA INC
Part No. MCM63Z818TQ133R MCM63Z818TQ100 MCM63Z736TQ133R
Description 128k x 36 and 256K x 18 Bit pipelined ZBT RAM synchronous Fast static RAM 256K x 18 ZBT sRAM, 4.2 ns, PQFP100
128k x 36 and 256K x 18 Bit pipelined ZBT RAM synchronous Fast static RAM 256K x 18 ZBT sRAM, 5 ns, PQFP100

File Size 224.88K  /  20 Page

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