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  4.720v Datasheet PDF File

For 4.720v Found Datasheets File :: 473    Search Time::3.843ms    
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    ST Microelectronics
Part No. STB9NK90Z
OCR Text ...c diagram t e TO-247 U 4 3 2 1 .c m o 1 3 DPAK 3 TO-220FP 1 2 Marking B9NK90Z F9NK90Z P9NK90Z W9NK90Z ...720V Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=720V, ID = 8A VGS =10V (see Figure 1...
Description N-Channel Enhancement Mode MOSFET

File Size 400.03K  /  15 Page

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    友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SC5353-TA3-T 2SC5353 2SC5353L-TF3-T 2SC5353L-TA3-T 2SC5353-TF3-T
OCR Text ...c Technologies Co., Ltd 1 of 4 QW-R203-031,A 2SC5353 ABSOLUTE MAXIMUM RATING (Tc = 25 ) PARAMETER Collector-Base Voltage Collector-...720V, IE= 0 VEB=7V, IC= 0 VCE=5 V, IC=1 mA VCE=5 V, IC=0.15 A IC=1.2 A, IB=0.45 A IC=1.2 A, IB=0.24 ...
Description HIGH VOLTAGE NPN TRANSISTOR

File Size 105.66K  /  4 Page

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    AME270461WCH AME270461WHB AME270461XES AME270461Z AME28461YCH AME28461W AME50461ZHB AME270461 AME270461_04 AME270461W AM

PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
Part No. AME270461WCH AME270461WHB AME270461XES AME270461Z AME28461YCH AME28461W AME50461ZHB AME270461 AME270461_04 AME270461W AME270461WES AME270461X AME270461XCH AME270461XHB AME270461Y AME270461YCH AME270461YES AME270461YHB AME270461ZCH AME270461ZES AME270461ZHB AME28461WCH AME28461WES AME28461WHB AME28461X AME28461XCH AME28461XES AME28461XHB AME28461Y AME28461YES AME28461YHB AME28461Z AME28461ZCH AME28461ZES AME28461ZHB AME50461W AME50461WCH AME50461WES AME50461WHB AME50461X AME50461XCH AME50461XES AME50461XHB AME50461Y AME50461YCH AME50461YES AME50461YHB AME50461Z AME50461ZCH AME50461ZES
OCR Text ...AGE OUTPUT CURRENT Note 3 Note 4 Note 2 Min -400 -720 Nom Max +400 +720 Unit VDC VDC ADC m 1, 2, 3 VOUT = VIN - IIN x RDC 1.5 DC RESISTANCE (RDC) POWER DISSIPATION 1 TC = 25C TC = 125C Maximum Load Current TC = 2...
Description    EMI FILTER HYBRID / HIGH RELIABILITY

File Size 104.97K  /  6 Page

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    Panasonic
Part No. 2SK2340
OCR Text ... secondary breakdown unit: mm 4.60.2 3.20.1 9.90.3 2.90.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving...720V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V,...
Description Silicon N-Channel Power F-MOS FET

File Size 48.13K  /  4 Page

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    2SK2340

Panasonic Corporation
Panasonic Semiconductor
Part No. 2SK2340
OCR Text ... secondary breakdown unit: mm 4.60.2 3.20.1 9.90.3 2.90.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving...720V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V,...
Description Silicon N-Channel Power F-MOS FET

File Size 42.12K  /  3 Page

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    2SK2374

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SK2374
OCR Text ...breakdown unit: mm 15.50.5 4.5 3.20.1 10.0 3.00.3 s Applications q Contactless relay q Diving circuit for a solenoid q Drivi...720V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V,...
Description Silicon N-Channel Power F-MOS FET 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 43.38K  /  3 Page

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    IRFAF30

International Rectifier
Part No. IRFAF30
OCR Text ...HANNEL BVDSS 900V RDS(on) 4.0 ID 2.0 The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET...720V ,VGS=0V VDS =720V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS= 10V, ID = 2.0A VDS = 450V VDD =...
Description 900V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

File Size 144.07K  /  7 Page

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    IRFAF50 IRFAF50PBF IRFAF50-15

International Rectifier
Part No. IRFAF50 IRFAF50PBF IRFAF50-15
OCR Text ...otes refer to the last page 6.2 4.0 25 150 1.2 20 870 6.2 15 1.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5(typical) Units...720V, VGS=0V VDS =720V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 10V, ID = 6.2A VDS = 450V VDD ...
Description Simple Drive Requirements
900V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
6.2 A, 900 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 146.58K  /  7 Page

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    IRG4BH20K-L

International Rectifier
Part No. IRG4BH20K-L
OCR Text ...de and IGBT * Latest generation 4 IGBT's offer highest power density motor controls possible TO-262 Absolute Maximum Ratings Parameter ...720V, TJ = 125C VGE = 15V, RG = 50 23 -- TJ = 150C, 28 -- IC = 5.0A, VCC = 960V ns 100 -- VGE = 15V,...
Description 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR

File Size 164.83K  /  8 Page

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    IRG4BH20K-S

International Rectifier
Part No. IRG4BH20K-S
OCR Text ...de and IGBT * Latest generation 4 IGBT's offer highest power density motor controls possible D2Pak Absolute Maximum Ratings Parameter V...720V, TJ = 125C VGE = 15V, RG = 50 23 -- TJ = 150C, 28 -- IC = 5.0A, VCC = 960V ns 100 -- VGE = 15V,...
Description 1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR

File Size 162.90K  /  8 Page

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