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  40-w Datasheet PDF File

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    D1U-W-1600-48-HA1C D1U-W-1600-48-HA2C D1U-W-1600-48-HB1C D1U-W-1600-48-HB2C D1U-W-1600-48-HC1C D1U-W-1600-48-HC2C S1U-3X

Murata Power Solutions Inc.
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Part No. D1U-W-1600-48-HA1C D1U-W-1600-48-HA2C D1U-W-1600-48-HB1C D1U-W-1600-48-HB2C D1U-W-1600-48-HC1C D1U-W-1600-48-HC2C S1U-3X-16-A-48-RC
OCR Text ...ensing Non-condensing Min. -40 0 10 5 Typ. Max. 70 50 90 90 Units C % 30G non operating 0.5G, 5 - 500 Hz operating Calcula...W-1600-48-Hx.C06 Page 2 of 7 D1U-W-1600-48-Hx Series AC/DC Front End Power Supply + S1U Power Sh...
Description AC/DC Front End Power Supply S1U Power Shelf

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    M95320-W M95320-S 5711

STMicroelectronics
Part No. M95320-W M95320-S 5711
OCR Text ... on ordering options) More than 40 Year Data Retention s s s s s s s s 8 1 SO8 (MN) 150 mil width s TSSOP8 (DW) 169 mil widt...W VSS 1 2 3 4 8 7 6 5 AI01790D VCC HOLD C D Note: 1. See page 30 (onwards) for package dimens...
Description 64KBIT AND 32KBIT SERIAL SPI BUS EEPROM WITH HIGH SPEED CLOCK
From old datasheet system

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    M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3

意法半导
EEPROM
STMicroelectronics N.V.
Part No. M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
OCR Text ...on Erase/Write Cycles More than 40-Year Data Retention Packages - ECOPACK(R) (RoHS compliant) Figure 1. Packages 8 1 PDIP8 (BN) 8 ...W M24C08 M24C08-R M24C04-W M24C04 M24C04-R M24C02-W M24C02 M24C02-R M24C01-W M24C01 M24C01-R Part Nu...
Description 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
CRYSTAL 9.84375MHZ 10PF SMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes
CRYSTAL 6.7458MHZ 20PF SMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM

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    M95256-W M95256-V M95256-S 5798

STMicroelectronics
Part No. M95256-W M95256-V M95256-S 5798
OCR Text ...00 Erase/Write Cycles More than 40 Year Data Retention 8 1 SO8 (MN) 150 mil width 8 1 SO8 (MW) 200 mil width June 2003 1/35 ...W VSS 1 2 3 4 8 7 6 5 AI01790D VCC HOLD C D D C S W HOLD M95xxx Q Table 1. Signal Names...
Description 128KBIT SERIAL SPI BUS EEPROM WITH HIGH SPEED CLOCK
From old datasheet system

File Size 226.33K  /  35 Page

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    M24C02-W M24C02-S M24C02-R M24C02-L 5067

STMicroelectronics
Part No. M24C02-W M24C02-S M24C02-R M24C02-L 5067
OCR Text ...on Erase/Write Cycles More than 40 Year Data Retention 8 1 SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width TSSOP8 (DS) 3x3mm body...W ACK NO ACK DATA IN STOP ACK NO ACK DATA IN 1 BYTE ADDR WC ACK Page Write START DEV SEL R/W N...
Description 16KBIT, 8KBIT, 4KBIT, 2KBIT AND 1KBIT SERIAL I2C BUS EEPROM
From old datasheet system

File Size 187.16K  /  26 Page

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    Electronic Theatre Controls, Inc.
Part No. SB090P200-W-AG
OCR Text ...ier schottky barrier 40 mils pt barrier 150 volt wafer ti/ni/ag ordering code sb040p150-w-ag 5
Description Schottky Barrier Diode Wafer 90 Mils, 200 Volt, 8 Amp 肖特基二极管晶圆90米尔斯,200伏,8安培

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    STMICROELECTRONICS[STMicroelectronics]
Part No. M24C16-W M2401RBN3TG_W M2401RBN6TG_S M2401RBN6TG_W M2401RBN6TP_W M2401RDS6TG_S M2401RDS6TP_S M2401RDW3TG_W M2401RDW6TG_W M2401RDW6TP_W M2401RMB3TG_S M2401RMB3TP_S M2401RMB6T_S M2401RMB6TP_S M2401RMN3T_W M2401RMN3TP_W M2401RMN6T_W M2401WBN3TP_S M2401WBN6T_S M2401WBN6T_W M2401WBN6TG_W M2401WBN6TP_S M2401WBN6TP_W M2401WDS3TG_S M2401WDW3TG_S M2401WDW3TG_W M2401WMB3T_S M2401WMB3T_W M2401WMB3TP_W M2401WMB6T_S M2401WMB6T_W M2401WMN3TG_W M2401WMN6TG_S M2402RBN3TG_W M2402RBN6TG_S M2402RBN6TG_W M2402RBN6TP_W M2402RDS3TG_S M2402RDS6TG_S M2402RDS6TP_S M2402RDW3TG_W M2402RDW6TG_W M2402RDW6TP_W M2402RMB3T_S M2402RMB3TP_S M2402RMB6T_S M2402RMB6TP_S M2402RMN3T_W M2402RMN3TP_W M2402RMN6T_W M2402WBN3TP_S M2402WBN6T_S M2402WBN6T_W M2402WBN6TP_S M2402WBN6TP_W M2402WDS3TG_S M2402WDS6TG_W M2402WDW3TG_S M2402WDW3TG_W M2402WDW3TP_S M2402WDW6TP_S M2402WMB3T_S M2402WMB3T_W M2402WMB3TP_W M2402WMB6T_S M2402WMB6T_W M2402WMN3TG_W M2402WMN6TG_S M2404RBN6T_S M2404RBN6TG_W M2404RBN6TP_W M2404RDS3TG_S M2404RDS6TG_S M2404RDS6TP_S M2404RDW3TG_W M2404RDW6TG_W M2404RDW6TP_W M2404RMB3T_S M2404RMB3TP_S M2404RMB6T_S M2404RMB6TP_S M2404RMN3TG_W M2404RMN3TP_W M2404WBN3TG_S M2404WBN3TP_S M2404WBN6T_S M2404WBN6T_W M2404WBN6TP
OCR Text ... million Write cycles More than 40-year data retention Packages - ECOPACK(R) (RoHS compliant) Product list Part Number M24C16-W M24C16 M24C16-R M24C08-W M24C08 M24C08-R M24C04-W M24C04 M24C04-R M24C02-W M24C02 M24C02-R M24C01-W M24C01 M24C...
Description 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM

File Size 204.26K  /  33 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. M95160-W M95080 M95080-R M95080-W M95160 M95160-R
OCR Text ...on Erase/Write cycles More than 40-year data retention Packages - ECOPACK(R) (RoHS compliant) Device summary Part number M95160 M95160 M95160-W M95160-R M95080 M95080 M95080-W M95080-R UFDFPN8 (MB) 2 x 3 mm (MLP) TSSOP8 (DW) 169 mil width ...
Description 16 Kbit and 8 Kbit serial SPI bus EEPROM with high speed clock

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    M95512-W

STMicroelectronics
Part No. M95512-W
OCR Text ...000 000 write cycles more than 40-year data retention packages ? ecopack? (rohs compliant) so8 (mn) 150 mils width tssop8 (dw) 169 mils width www.st.com contents m95512-w, m95512-r 2/39 contents 1 description . . . . . . . . . . ....
Description 512 Kbit Serial SPI bus EEPROM

File Size 336.15K  /  39 Page

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