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SEME-LAB[Seme LAB]
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| Part No. |
DMD5012-A DMD5012
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| OCR Text |
...0V Idq = 1.2A f =500MHz
W
40 20 0
Vds = 50V Idq = 1.2A f =500MHz
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
%
30
0
20
40
60
Pout W
80
100
120
0 2.25
Pin W
Output Power Power Added Efficiency
Figure 1... |
| Description |
IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET 100W - 50V - 500MHz PUSH-PULL
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| File Size |
58.14K /
5 Page |
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M/A-COM Technology Solution...
M/A-COM Technology Solu...
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| Part No. |
NPA1003 NPA1003-15
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| OCR Text |
... 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -40 0 c 25 0 c 85 0 c gain (db) frequency (ghz) 35 40 45 50 55 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -40 0 c 25...500mhz 900mhz 1.5ghz gain (db) p out (dbm) 0 10 20 30 40 50 60 70 10 15 20 25 30 35 40 100mhz 500m... |
| Description |
Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
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| File Size |
1,581.76K /
8 Page |
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it Online |
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SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
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| Part No. |
PD54003-PD PD54003-PD54003S XPD54003S PD54003 PD54003S XPD54003 -XPD54003S
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| OCR Text |
...
Rtl, RETURN LOSS(dB)
60 50 40 30 20 10 0 1 2 3 4
Pout, OUTPUT POWER (W)
Vdd=7.5V Idq=50mA 500MHz
-10
480M Hz
-20
-30
Vdd=7.5 V Idq=50mA
520MHz
500MHz
-40 0 1 2 3 4
Pout, OUTPUT POWER (W)
Output Power vs. Bia... |
| Description |
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
RF POWER TRANSISTORS The LdmoST Plastic FAMILY 射频功率晶体管LdmoST塑料家庭
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| File Size |
114.50K /
10 Page |
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it Online |
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Electronic Theatre Controls, Inc.
GSI Technology, Inc.
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| Part No. |
FHW1008IF6R8JGB FHW1008IF1R8JSB FHW0603UCR11JGB FHW0603UCR10JGT FHW0603UCR11GGB FHW0603UCR12GGB FHW1008IF330JST FHW1008IF330JSB FHW1008IF330KST FHW1008IF330JGT FHW1008IF150KGT FHW1210IF150JST FHW1812IF151KST FHW1210IF101JGT FHW1812IF101KSB FHW1210IF471JSB FHW1210IF471JST FHW1210IF4R7JGB FHW1210IF471JGT FHW0805UC012GGT FHW0805UC012JGB FHW0805UC015GGT FHW1210IF390JSB
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| OCR Text |
...0.69 0.69 0805 2.30 1.70 1.40 0.57 1.88 1.07 0.81 1008 2.75 2.70 2.10 0.57 2.64 1.07 1.32 1210 3.50 2.90 2.25 0.57 2....500mhz 4200 0.150 600 fhw0805ucr33 gt 330 5%or 2% @ 100mhz 4 0 @ 250mhz 600 1.400 310 fhw0805... |
| Description |
1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 1.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 0.11 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 0.1 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 150 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.015 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
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| File Size |
345.47K /
6 Page |
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it Online |
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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
D1213UK D1213
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| OCR Text |
... VGS ID = 2A 0.5 1.6 10 50 20:1 40
Typ.
Max. Unit
V 1 1 7 mA A V S dB % -- 120 80 8 pF pF pF
VGS(th) Gate Threshold Voltage*
VS...500MHz Idq = 0.5A V ds = 7.2V
9
Gain dB
8
2
f = 500MHz Idq = 0.5A V ds = 7.2V
0 0.5 ... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
37.94K /
4 Page |
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YAGEO Corporation
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| Part No. |
CAN4313129200431B
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| OCR Text |
... 50 operating temperature -40~85 o c termination ni/sn (environmentally-friendly leadless) resistance to soldering heat 260 o c, 1...500mhz can4311129200431b (clear text code example) can43 13 1 29 20 043 1 b p... |
| Description |
433MHz Ceramic Chip Antenna
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| File Size |
118.11K /
10 Page |
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it Online |
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