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  5.25w Datasheet PDF File

For 5.25w Found Datasheets File :: 3961    Search Time::1.5ms    
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    TMS06105 TMS06112 TMS06115 TMS06124 TMS06212 TMS06215 TMS25105 TMS25105C TMS25105F TMS25112 TMS25112C TMS25112F TMS25115

TRACO ELECTRONIC AG.
TRACOPOWER[TRACO Electronic AG]
http://
Part No. TMS06105 TMS06112 TMS06115 TMS06124 TMS06212 TMS06215 TMS25105 TMS25105C TMS25105F TMS25112 TMS25112C TMS25112F TMS25115 TMS25115C TMS25115F TMS25124 TMS25124C TMS25124F TMS25212 TMS25212C TMS25212F TMS25215 TMS25215C TMS25215F TMS10105 TMS10105F TMS10112 TMS10112F TMS10115 TMS10115F TMS10124 TMS10124F TMS10212 TMS10212F TMS10215 TMS10215F TMS15105 TMS15105C TMS15105F TMS15112 TMS15112C TMS15112F TMS15115 TMS15115C TMS15115F TMS15124 TMS15124C TMS15124F TMS15212 TMS15212C TMS15212F TMS15215 TMS15215C TMS15215F TRACOELECTRONICAG.-TMS15112F
OCR Text ...Output Power max. Output 1 Inom 5 VDC 12 VDC 15 VDC 24 VDC +12 VDC +15 VDC 5 VDC 12 VDC 15 VDC 24 VDC +12 VDC +15 VDC / / / / / / / / / / / ...25W F 3.5 (0.14) 3.5 (0.14) Pin-Out 4 5 6 4.5 (0.18) Pin 1 2 3 4 1.0 29 + 0...
Description    MicroSwitcher
MicroSwitcher MicroSwitcher
CONNECTOR ACCESSORY MicroSwitcher
CAT .0022UF 100V PEN FILM 1206 5

File Size 89.72K  /  6 Page

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    TS431 TS431AI TS431I

ST Microelectronics
STMicroelectronics
Part No. TS431 TS431AI TS431I
OCR Text ...92 (Plastic Package) L SOT23-5 The TS431is a threeterminals programmableshunt Voltage Referenceoptimized for hightemperatures. However, it can operate from -40oC up to +125oC. The output voltage is set by two external resistors to any...
Description LOW VOLTAGE ADJUSTABLE SHUNT REFERENCE

File Size 81.82K  /  8 Page

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    TS63 TS63Y504KR10 TS63Y504KR10TR500 TS63Y

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. TS63 TS63Y504KR10 TS63Y504KR10TR500 TS63Y
OCR Text ...S in millimeters TS63X slot 0.5 x 0.5 0.25 O 1.8 c b O 0.45 2.54 2.54 0.20 6.85 max 0.7 5.8 0.10 RECOMMENDED SOLDERING AREAS 5 max ...25W at 85C not applicable See Standard Resistance Element Data 250V 2% Rn or 2 1 1000V 106M Visha...
Description Multi-Turn Surface Mount Miniature 1/4 Square Cermet Trimmers, Fully Sealed 多回转表面安装的微型四分之一广场金属陶瓷司炉工,全密
Multi-Turn Surface Mount Miniature 1/4 Square Cermet Trimmers/ Fully Sealed

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    UAA4713 UAA4713DP UAA4713FP 1530

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. UAA4713 UAA4713DP UAA4713FP 1530
OCR Text ...eter Test Conditions 60 200 500 5 -9 9.5 8 8 -25 to 85 -40 to 150 650 Unit mA mA mA mA V V V V C C mW THERMAL DATA Symbol Rth j-amb Para...25W) QUANTITY VALUE 1M 47k 680 1K 470K 220K 500K Figure 9: Demo Board Photo IRA - E100S 11/14 ...
Description From old datasheet system
MOTION DETECTOR INTERFACE

File Size 321.99K  /  14 Page

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    APT6021BFLL APT6021SFLL APT10045JFLL APT10090BFLL APT10090SFLL

ADPOW[Advanced Power Technology]
Part No. APT6021BFLL APT6021SFLL APT10045JFLL APT10090BFLL APT10090SFLL
OCR Text ...Amps 600 29 0.210 250 1000 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 29A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT6021BLL APT6021SLL

Advanced Power Technology
Part No. APT6021BLL APT6021SLL
OCR Text ...s Amps 600 29 0.21 100 500 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 29A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ number...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.74K  /  2 Page

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    APT6025BFLL APT6025SFLL

ADPOW[Advanced Power Technology]
Part No. APT6025BFLL APT6025SFLL
OCR Text ...Amps 600 24 0.250 250 1000 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 24A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.51K  /  2 Page

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    APT6025BLL APT6025SLL

ADPOW[Advanced Power Technology]
Part No. APT6025BLL APT6025SLL
OCR Text ...s Amps 600 24 0.25 100 500 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 24A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ number...
Description Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.69K  /  2 Page

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    APT6029BFLL APT6029SFLL

ADPOW[Advanced Power Technology]
Part No. APT6029BFLL APT6029SFLL
OCR Text ... 600 21 0.290 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 21A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.39K  /  2 Page

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    APT6029BLL APT6029SLL

ADPOW[Advanced Power Technology]
Part No. APT6029BLL APT6029SLL
OCR Text ...ps 600 21 0.29 100 500 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 21A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.

File Size 56.91K  /  2 Page

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