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  50v 7a Datasheet PDF File

For 50v 7a Found Datasheets File :: 1397    Search Time::3ms    
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    FS7VS-5

Renesas Electronics Corporation
Part No. FS7VS-5
OCR Text ...ICS (TYPICAL) 10 TC = 25C VDS = 50v Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT ...7a VDS = 50v 100V 16 TC = 125C 12 200V 8 8 4 4 0 0 4 8 12 ...
Description MITSUBISHI Nch POWER MOSFET

File Size 78.25K  /  5 Page

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    STF/15NM60N STF15NM60N

STMicroelectronics
Part No. STF/15NM60N STF15NM60N
OCR Text ...ting tj=25c, i d =i as , v dd = 50v) 300 mj electrical characteristics stb15nm60n - s tf/i15nm60n - stp15nm60n - stw15nm60n 4/18 2 ele...7a 0.270 0.299 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1....
Description N-channel Power MOSFET

File Size 632.02K  /  18 Page

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    IRFN130SMD05 IRFNJ130N

Seme LAB
Part No. IRFN130SMD05 IRFNJ130N
OCR Text ...d = 11a v ds = 0.5bv dss v dd = 50v i d = 11a r g = 7.5 ? i s = 11a t j = 25c v gs = 0 i s = 11a t j = 25c d i / d t 100a/ sv dd 50v electrical characteristics (t c = 25c unless otherwise stated) drain ? source breakdown voltage tempera...
Description N?CHANNEL POWER MOSFET

File Size 29.24K  /  2 Page

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    2N6109

Inchange Semiconductor Company Limited
Part No. 2N6109
OCR Text ...Sustaining Voltage: VCEO(SUS)= -50v(Min) APPLICATIONS *Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAX...7a; IB= -3A IC= -7a ; VCE= -4V VCE= -60V; VBE(off)= -1.5V VCE= -50v; VBE(off)= -1.5V; TC= 150 VCE= -...
Description isc Silicon PNP Power Transistor

File Size 184.43K  /  2 Page

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    IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR
OCR Text ...DS = VGS, ID = 250A --- S VDS = 50v, I D = 1.0A 100 VDS = 900V, VGS = 0V A 500 VDS = 720V, VGS = 0V, TJ = 125C 100 V GS = 20V nA -100 VGS = -20V 38 I D = 1.7a 4.7 nC VDS = 360V 21 VGS = 10V, See Fig. 6 and 13 --- VDD = 450v --- I D = 1.7a ...
Description Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7a) 功率MOSFET(减振钢板基本\u003d 900V,的Rds(on)\u003d 8.0ohm,身份证\u003d 1.7a
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 307.93K  /  10 Page

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    FS7KM-5

Renesas Electronics Corporation
Part No. FS7KM-5
OCR Text ...ICS (TYPICAL) 10 TC = 25C VDS = 50v Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT ...7a VDS = 50v 100V 16 TC = 125C 12 200V 8 8 4 4 0 0 4 8 12 ...
Description MITSUBISHI Nch POWER MOSFET

File Size 81.18K  /  5 Page

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    IRFL214PBF

International Rectifier
Part No. IRFL214PBF
OCR Text ....47a VDS = VGS, ID = 250A VDS = 50v, ID = 0.47 A VDS = 250v, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 2.7a VDS = 200V VGS = 10V, See Fig. 6 and 13 VDD = 125V ID = 2.7a RG = 24 RD = 45 , See Fig. 10 Between lead, 6...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 221.53K  /  9 Page

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    2SB1155

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1155
OCR Text ...B1 = - 0.7a, IB2 = 0.7a, VCC = -50v 25 0.5 1.3 0.2 -80 45 90 30 - 0.5 -1.5 -1.5 -2.5 V V V V MHz s s s 260 min typ max -10 -50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter satura...
Description Silicon PNP epitaxial planar type(For power switching)

File Size 59.98K  /  3 Page

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    IRFN130SMD05 IRF130SMD05N

Seme LAB
Part No. IRFN130SMD05 IRF130SMD05N
OCR Text ...d = 11a v ds = 0.5bv dss v dd = 50v i d = 11a r g = 7.5 w i s = 11a t j = 25c v gs = 0 i s = 11a t j = 25c d i / d t 100a/ m sv dd 50v electrical characteristics (t c = 25c unless otherwise stated) drain ? source breakdown voltage temper...
Description N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS

File Size 24.26K  /  2 Page

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    Infineon
Part No. SPA20N60C3 SPB20N60C3 SPP20N60C3
OCR Text ..., single pulse i d =10a, v dd =50v e as 690 690 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =20a, v dd =50v e ar 1 1 ...7a, r g =3.6 ? , t j =125 - 10 - ns rise time t r v dd =380v, v gs =0/13v, i d =20.7a, r g =3...
Description for lowest Conduction Losses & fastest Switching

File Size 333.03K  /  14 Page

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For 50v 7a Found Datasheets File :: 1397    Search Time::3ms    
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