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50N06 4022B 7848B MUR810 DI815C TMXW306 MSK645 MAX6446
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  52.8 Datasheet PDF File

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    LTW5KM

OSRAM GmbH
Part No. LTW5KM
OCR Text ...tief blau), 470 nm (blau), 528 nm (true green) ? abstrahlwinkel: 160 (fr displayhinterleuchtung optimiert) ? technologie: thingan ? max. optischer wirkungsgrad: ?47 % (tief blau), 28 lm/w (blau), 100 lm/w (true ...
Description white SMD package, colorless clear silicone resin with ARGUS? optic

File Size 294.74K  /  18 Page

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    LTW5AP

OSRAM GmbH
Part No. LTW5AP
OCR Text ...tief blau), 470 nm (blau), 528 nm (true green) ? abstrahlwinkel: 140 ? technologie: thingan ? optischer wirkungsgrad: 28 % (tief blau), 14 lm/w (blau), 32 lm/w (true green) bei 1,4 a ? gruppierungsparameter: ...
Description black SMD package, colorless clear silicone resin, silicone lense

File Size 276.55K  /  19 Page

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    LTW5AM

OSRAM GmbH
Part No. LTW5AM
OCR Text ...tief blau), 467 nm (blau), 528 nm (true green) ? abstrahlwinkel: 170 ? technologie: thingan ? optischer wirkungsgrad: 54 % (tief blau), 35 lm/w (blau), 136 lm/w (true green) bei 100 ma ? gruppierungsparamet...
Description white SMD package, clear silicone lens

File Size 233.81K  /  22 Page

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    MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR

FUJITSU LTD
Fujitsu Component Limited.
Fujitsu Limited
Part No. MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR
OCR Text ... NAND flash memory organized as 528 byte x 16 pages x 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code(Specifications indecated are on condition that ECC system would be...
Description 64M (8M X 8) BIT NAND-type

File Size 288.94K  /  43 Page

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    LTW51M

OSRAM GmbH
Part No. LTW51M
OCR Text ...tief blau), 470 nm (blau), 528 nm (true green) ? abstrahlwinkel: 20, enger abstrahlwinkel ? technologie: thingan ? max. optischer wirkungsgrad: ? 43 % (tief blau), 25 lm/w (blau), 90 lm/w (true green) bei 100 ma...
Description white SMD package, colorless clear silicone resin with ARGUS? optic

File Size 284.43K  /  18 Page

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    AT45DB321B AT45DB321B-CC AT45DB321B-CI AT45DB321B-RC AT45DB321B-RI AT45DB321B-TC AT45DB321B-TI AT45DB321BNBSP

ATMEL[ATMEL Corporation]
Part No. AT45DB321B AT45DB321B-CC AT45DB321B-CI AT45DB321B-RC AT45DB321B-RI AT45DB321B-TC AT45DB321B-TI AT45DB321BNBSP
OCR Text ...rase and Program) - 8192 Pages (528 Bytes/Page) Main Memory Supports Page and Block Erase Operations Two 528-byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Nonvolatile Memory Continuous Read Capability through Enti...
Description From old datasheet system
32M bit, 2.7-Volt Only Serial Interface Flash with two 528-Byte SRAM Buffers
32-megabit 2.7-volt Only DataFlash

File Size 214.71K  /  32 Page

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    LBW5SN-FZHX-25 LDW5SN-3T4U-35 LTW5SN-JYKZ-25 LBW5SN-GZJX-35 LDW5SN-1T2U-35

OSRAM GmbH
http://
Part No. LBW5SN-FZHX-25 LDW5SN-3T4U-35 LTW5SN-JYKZ-25 LBW5SN-GZJX-35 LDW5SN-1T2U-35
OCR Text ... nm (tief blau), 470 nm (blau), 528 nm (true green) * Abstrahlwinkel: Lambertscher Strahler (120) * Technologie: ThinGaN * optischer Wirkungsgrad: 21 % (tief blau), 13 lm/W (blau), 36 lm/W (true green) * Gruppierungsparameter: Lichtstrom, W...
Description Platinum DRAGON? Lead (Pb) Free Product - RoHS Compliant

File Size 310.25K  /  20 Page

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    TC58DVM92A1FT00 TC58DVM92A1FT

Toshiba Semiconductor
Part No. TC58DVM92A1FT00 TC58DVM92A1FT
OCR Text ...mory (NAND E2PROM) organized as 528 bytes 32 pages 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase ...
Description Flash - NAND
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
   MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 445.98K  /  44 Page

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    TC58DVM92A1FTI0

Toshiba Semiconductor
Part No. TC58DVM92A1FTI0
OCR Text ...mory (NAND E2PROM) organized as 528 bytes 32 pages 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase ...
Description TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 452.59K  /  44 Page

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    K9F1208B0C

Samsung semiconductor
Part No. K9F1208B0C
OCR Text ...erformed in typical 200s on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/...
Description FLASH MEMORY

File Size 716.17K  /  38 Page

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