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  CM150E3U-24F Datasheet PDF File

For CM150E3U-24F Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM600HU-24F
Description HIGH POWER SWITCHING USE

File Size 63.42K  /  4 Page

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HUA FENG CIRCUIT





    Z86C95-24FSC

Newhaven Display International, Inc.
Part No. Z86C95-24FSC
Description 8-BIT MICROCONTROLLER 8位微控制

File Size 2,047.66K  /  81 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM600HU-24F
Description Trench Gate Design Single IGBTMOD?/a> 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/1200 Volts

File Size 97.16K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. RM200DA-24F
Description 200 A, 1200 V, SILICON, RECTIFIER DIODE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)

File Size 56.79K  /  3 Page

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    CM600DU-24F

Mitsubishi Electric Semiconductor
Part No. CM600DU-24F
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 120.52K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM150DU-24F
Description IGBT Modules:1200V

File Size 82.01K  /  4 Page

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    CM75TU-24F09

Mitsubishi Electric Semiconductor
Part No. CM75TU-24F09
Description HIGH POWER SWITCHING USE

File Size 109.75K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM200DU-24F
Description IGBT Modules:1200V

File Size 55.80K  /  4 Page

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    CM600DU-24F

Mitsubishi Electric Semiconductor
Part No. CM600DU-24F
Description HIGH POWER SWITCHING USE

File Size 72.18K  /  4 Page

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    CM100DU-24F CM100DU-24H

Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
Part No. CM100DU-24F CM100DU-24H
Description Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts

File Size 103.58K  /  4 Page

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Part: CM150E3U-12H
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