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Microsemi
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| Part No. |
APTSM120AM55CT1AG
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| OCR Text |
...- source voltage -10/+25 v r dson drain - source on resistance 50 m p d power dissipation t c = 25c 470 w application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? mot... |
| Description |
Phase Leg SiC MOSFET Module
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| File Size |
497.66K /
8 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTE1K8N15KN3 MTE1K8N15KN3-0-T1-G
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| OCR Text |
...a =25 c 0.7a 1.07(typ.) r dson @v gs =10v, i d =0.5a features r dson @v gs =10v, i d =1a 1.15(typ.) ? low on-resistance ? excellent thermal and electrical capabilities ? compact and low profile sot-23 package ? pb-free lea... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
402.12K /
9 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT33N90JCCU2
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| OCR Text |
...te - source voltage 20 v r dson drain - source on resistance 120 m ? p d maximum power dissipation t c = 25c 290 w i ar avalanche current (repetitive and non repetitive) 8.8 a e ar repetitive avalanche energy ... |
| Description |
Si MOSFET SiC Diode Module
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| File Size |
275.92K /
6 Page |
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it Online |
Download Datasheet |
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Cystech Electonics Corp...
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| Part No. |
MTB150N10N3-0-T1-G
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| OCR Text |
... g gate s source d drain r dson @v gs =10v, i d =1.6a 128m (typ) r dson @v gs =4.5v, i d =1.3a 135m (typ) environment friendly grade : s for rohs compliant products, g for rohs d g s compliant packing spec, t1 : 3000 pcs / tape... |
| Description |
100V N-Channel Enhancement Mode MOSFET
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| File Size |
344.56K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTA050B01DFA6-0-T1-G
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| OCR Text |
...s =-4.5 v, t a =25 c -4.3a r dson @v gs =-4.5v, i d =-3.6a 39m ( typ .) r dson @v gs =-2.5v, i d =-3.2a 55m ( typ .) r dson @v gs =-1.8v, i d =-1.0a 69m ( typ .) environment friendly grade : s for rohs compliant products, g ... |
| Description |
Dual P-Channel Enhancement Mode MOSFET
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| File Size |
488.28K /
10 Page |
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it Online |
Download Datasheet |
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Cystech Electonics Corp...
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| Part No. |
MTP4435H8 MTP4435H8-0-T6-G
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| OCR Text |
... v gs =-10v, i d =-20a 11m r dson(typ) v gs =-4.5v, i d =-12a 14.3m features ? single drive requirement ? low on-resistance ? fast switching characteristic ? pb-free lead plating and halogen-free package symbol ... |
| Description |
P-Channel Enhancement Mode Power MOSFET
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| File Size |
553.80K /
11 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTD010P03Q8 MTD010P03Q8-0-T3-G
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| OCR Text |
...s =-10v, t a =70 c -8.3a r dson @v gs =-20v, i d =-12a 10m (typ) r dson @v gs =-10v, i d =-12a 11m (typ) r dson @v gs =-6v,i d =-10a 13.3m (typ) features ? simple drive requirement ? low on-resistance ? fast switching spee... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
372.38K /
9 Page |
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it Online |
Download Datasheet |
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Cystech Electonics Corp...
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| Part No. |
MTB020N03KV8-0-T6-G
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| OCR Text |
...v gs =10v, i d =10a 12.4m r dson(typ) v gs =4.5v, i d =8a 16.8m features ? low gate charge ? simple drive requirement ? esd protected gate ? pb-free lead plating package equivalent circuit ... |
| Description |
N -Channel Enhancement Mode Power MOSFET
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| File Size |
452.15K /
9 Page |
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it Online |
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Microsemi
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| Part No. |
APTC60TAM21SCTPAG
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| OCR Text |
...microsemi.com v dss = 600v r dson = 21m typ @ tj = 25c i d = 116a @ tc = 25c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? coolmos? -... |
| Description |
Si MOSFET SiC Diode Module
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| File Size |
486.94K /
8 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT50N60JCCU2
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| OCR Text |
...te - source voltage 20 v r dson drain - source on resistance 45 m p d maximum power dissipation t c = 25c 290 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3... |
| Description |
Si MOSFET SiC Diode Module
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| File Size |
193.59K /
4 Page |
View
it Online |
Download Datasheet |
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