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80C31N SEL6810A FEP16JT AN5332N FX641 SKB20440 AN5332N PC40EIXX
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    AOT5B60D

Alpha & Omega Semiconductors
Part No. AOT5B60D
OCR Text ... ce =400v,r g =60 w ww w ) eoff eon etotal 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 600 switching energy (mj) r g ( w ww w ) figure 18: switching loss vs. r g (t j =175c,v ge =15v,v ce =400v,i c =5a) eoff eon etotal 0.1 0....
Description 600V, 5A Alpha IGBT with Diode

File Size 635.05K  /  9 Page

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    RJQ6015DPM-00T0 RJQ6015DPM-15

Renesas Electronics Corporation
Part No. RJQ6015DPM-00T0 RJQ6015DPM-15
OCR Text ... ( ) (inductive load) eoff eon v cc = 300 v, v ge = 15 v i c = 37 a, tc = 150 c swithing energy losses e (mj) switching times t (ns) 110 100 0.01 1 0.1 100 10 v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c swithing energy...
Description 600V - 18A - IGBT and Diode Application: Inverter

File Size 115.07K  /  10 Page

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    RJQ6008DPM-00T0 RJQ6008DPM-15

Renesas Electronics Corporation
Part No. RJQ6008DPM-00T0 RJQ6008DPM-15
OCR Text ... = 15 v i c = 50 a, tj = 25 c eon includes the diode recovery switching characteristics (typical) (6) 10000 1000 100 50 25 150 75 125 100 junction temperature tj (c) (inductive load) swithing energy losses e ( j) v cc = 300 v, v g...
Description 600V - 10A - IGBT and Diode High Speed Power Switching

File Size 113.64K  /  9 Page

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    RJQ6003DPM-00T0 RJP6003DPM

Renesas Electronics Corporation
Part No. RJQ6003DPM-00T0 RJP6003DPM
OCR Text ...racteristics (typical) (4) eoff eon swithing energy losses e ( j) switching times t (ns) 110 200 100 10 1000 100 100000 10000 swithing energy losses e ( j) collector current i c (a) (inductive load) eoff eon switching ch...
Description 600V - 20A - IGBT and Diode High Speed Power Switching

File Size 107.51K  /  9 Page

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    RJP60V0DPM-80T2

Renesas Electronics Corporation
Part No. RJP60V0DPM-80T2
OCR Text ...rg () (inductive load) eoff eon eoff eon swithing e nergy losses e () swithing e nergy losses e () swithing e nergy losses e () collector current i c (a) (inductive load) eoff eon switching characteristics ( typical) (2)...
Description 600V - 22A - IGBT Application: Inverter

File Size 108.56K  /  8 Page

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    VISHAY INTERTECHNOLOGY INC
Part No. CNY17-1X001
OCR Text eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ?regensburg, germany www.osram-os.com ?+49-941-202-7178 1 february 24, 2000-20 fea...
Description 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER

File Size 212.24K  /  4 Page

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    RJH1CV7DPQ-E013

Renesas Electronics Corporation
Part No. RJH1CV7DPQ-E013
OCR Text ... ( ) (inductive load) eoff eon swithing energy losses e (mj) switching times t (ns) switching characteristics (typical) (3) switching characteristics (typical) (4) 110 100 0.1 10 1 100 swithing energy losses e (mj) 110100 1 10...
Description 1200V - 35A - IGBT Application: Inverter

File Size 188.24K  /  10 Page

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    RJH1CV7DPK-00T0

Renesas Electronics Corporation
Part No. RJH1CV7DPK-00T0
OCR Text ...rg () (inductive load) eoff eon swithing e nergy losses e (mj) switching ti mes t (ns) switching characteristics ( typical) (3) switching characteristics ( typical) ( 4) 11 0 100 0.1 10 1 100 swithing e nergy losses e (mj) 11 0...
Description 1200V - 35A - IGBT Application: Inverter

File Size 122.83K  /  10 Page

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    7MBR100SB060

FUJI[Fuji Electric]
Part No. 7MBR100SB060
OCR Text ..., Rg=24 ton Switching loss : eon, Eoff, Err [ mJ/pulse ] toff tr 8 eon(125 C) Switching time : ton, tr, toff, tf [ nsec ] 1000 Eoff(125 C) o o 6 eon(25 C) o 4 Eoff(25 C) o 100 tf 2 Err(125 C) o o Err...
Description IGBT(600V/100A)

File Size 569.52K  /  7 Page

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    7MBR50SB060

FUJI[Fuji Electric]
Part No. 7MBR50SB060
OCR Text ..., Rg=51 ton Switching loss : eon, Eoff, Err [ mJ/pulse ] toff tr 4 eon(125 C) Eoff(125 C) o o Switching time : ton, tr, toff, tf [ nsec ] 1000 3 eon(25 C) o 100 tf 2 Eoff(25 C) o 1 Err(125 C) o...
Description IGBT(600V/50A/PIM)

File Size 588.06K  /  7 Page

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