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Intersil
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| Part No. |
HS-54C138RH 5962R9582501QEC
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| OCR Text |
...l' QM Plan * Radiation Hardened epi-cmos - Total Dose 1 x 105 RAD (Si) - Latch-Up Immune > 1 x 1012 RAD (Si)/s * Multiple Input Enable for Easy Expansion * Single Power Supply +5V * Outputs Active Low * Low Standby Power (0.5mW Max at +5V) ... |
| Description |
Radiation Hardened 3-Line to 8-Line Decoder/Demultiplexer
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| File Size |
43.09K /
7 Page |
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Macronix International Co., Ltd.
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| Part No. |
MX29F002NPC-70
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| OCR Text |
...ved with mxic's proprietary non-epi process. latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. mx29f002/ mx29f002n mx29f002/ mx29f002n
2 rev. 0.7, sep 14, 1998 p/n: pm0547 mx2... |
| Description |
256K X 8 FLASH 5V PROM, 70 ns, PDIP32 PLASTIC, DIP-32
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| File Size |
252.88K /
37 Page |
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Micross Components
Austin Semiconductor, Inc
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| Part No. |
MT5C1009SOJ-35E/XT MT5C1009SOJ-55E/XT MT5C1009SOJ-55E/883C MT5C1009SOJ-55E/IT 1009F-70E/XT MT5C1009F-35E/XT
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| OCR Text |
...w power l ? radiation tolerant (epi) e *electrical characteristics identical to those provided for the 45ns access devices. pin assignment (...cmos static ram organized as 131,072 words by 8 bits. this device uses 8 common input and output li... |
| Description |
128K X 8 STANDARD SRAM, 35 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 55 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 70
128K X 8 STANDARD SRAM, 35 ns, CDFP32
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| File Size |
251.39K /
17 Page |
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Micross Components
Austin Semiconductor, Inc
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| Part No. |
MT5C1008SOJ-35E/XT MT5C1008SOJ-55E/XT MT5C1008SOJ-55E/IT MT5C1008SOJ-25E/883C MT5C1008SOJ-25E/IT MT5C1008SOJ-20E/XT MT5C1008SOJ-25E/XT MT5C1008SOJ-12E/883C MT5C1008SOJ-55E/883C MT5C1008SOJ-35E/883C MT5C1008SOJ-12E/IT MT5C1008SOJ-35E/IT MT5C1008SOJ-20E/IT MT5C1008SOJ-20E/883C MT5C1008SOJ-12E/XT MT5C1008SOJ-45E/883C MT5C1008SOJ-45E/IT MT5C1008SOJ-45E/XT MT5C1008ECA-70E/IT MT5C1008EC-70E/XT MT5C1008ECA-70E/XT MT5C1008EC-70E/883C MT5C1008EC-70E/IT MT5C1008ECA-70E/883C
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| OCR Text |
...w power l ? radiation tolerant (epi) e *electrical characteristics identical to those provided for the 45ns access devices. pin assignment (...cmos designs using a four-transistor memory cell, and are fabricated using double-layer metal, doubl... |
| Description |
128K X 8 STANDARD SRAM, 35 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 55 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 25 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 12 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 45 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 70 ns, CQCC32 CERAMIC, LCC-32
128K X 8 STANDARD SRAM, 70 ns, CDSO32 CERAMIC, LCC-32
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| File Size |
248.52K /
17 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
MX28F2000TQC-12C4 MX28F2000TPC-12C4 MX28F2000TQC-90C4
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| OCR Text |
...ved with mxic's proprietary non-epi process. latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. mx28f2000t 2m-bit [256k x 8] cmos flash memory
2 mx28f2000t p/n: pm0472 rev. 1.0, j... |
| Description |
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PQCC32
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| File Size |
119.14K /
31 Page |
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it Online |
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