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Microsemi, Corp.
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| Part No. |
APT50GT120B2RDQ2G
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| Description |
insulated gate Bipolar Transistor - NPT Standard speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL igbt, TO-247
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| File Size |
224.58K /
9 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT40G121
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| Description |
insulated gate Bipolar Transistor Silicon N Channel igbt The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA insulated gate Bipolar Transistor Silicon N Channel igbt
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| File Size |
139.45K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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