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Duracell
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| Part No. |
UPG2404T6Q-E2-a
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| OCR Text |
fet switch which was developed for cdma/pcs/gps triple mode digital cellular telephone application. this device can operate from 10 mhz to...a 10-pin plastic tsson (t hin s hrink s mall o ut-line n on-leaded) package, and is suitable to hig... |
| Description |
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| File Size |
134.64K /
9 Page |
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it Online |
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Duracell
California Eastern Laboratories
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| Part No. |
UPG2227T5F-a UPG2227T5F-E2-a
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| OCR Text |
fet switch for cdma/pcs/gps triple mode digital cellular telephone application. the device can operate from 500 mhz to 2.5...a caution observe precautions when handling because these devices are sensitive to electrostatic di... |
| Description |
NECs L-BaND SP3T SWITCH
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| File Size |
329.89K /
8 Page |
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it Online |
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California Eastern Laboratories
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| Part No. |
NE664M04-T2-a
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| OCR Text |
...678m04 ne664m04 ne5520379a (mos fet) a 3 9z001 r55 r57 cordless phone f = 0.9 ghz ?3 dbm 9 dbm 25 dbm ne68019 (3-pin tusmm) ne664m04 r57 t h
ne664m04 typical performance curves (t a = 25 c) ambient temperature, t a ( o c) total powe... |
| Description |
MEDIUM POWER NPN SILICON HIGH FRQUENCY TRaNSISTOR
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| File Size |
202.44K /
10 Page |
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it Online |
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Duracell
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| Part No. |
NE664M04-T2-a
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| OCR Text |
...78m04 ne664m04 ne5520379 a (mos fet ) a 3 9z001 r55 r57 cordless phone f = 0.9 ghz ?3 dbm 9 db m2 5 dbm ne68019 (3-pin tusmm) ne664m04 r57 t h
ne664m04 typical performance curves (t a = 25c) ambient temperature, t a ( o c) total power... |
| Description |
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| File Size |
546.53K /
10 Page |
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it Online |
Download Datasheet |
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Duracell
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| Part No. |
UPC1663GV-E1-a
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| OCR Text |
...can be achieved by inserting a fet buffer when necessary as illustrated above. +5v 2.2 1000 1000 v+ +5v 3 k 3 k 2.2 1000 2.2 1000 50? 50? 50? 50? 1000 r a r a 1663 v- vc vc r3 vc + 5 v r1 r5 1 k? r6 1 k? ve - 5 v r2 75? r4 50? c2 c1 1000 p... |
| Description |
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| File Size |
315.60K /
5 Page |
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it Online |
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California Eastern Laboratories, Inc.
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| Part No. |
NE3503M04-T2-a NE3503M04-a
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| OCR Text |
fet ne3503m04 applications ? dbs lnb gain-stage, mix-stage ? low noise ampli?er for microwave communication system california eastern l...a caution observe precautions when handling because these devices are sensitive to electrostatic di... |
| Description |
PC 3C 3#16 PIN RECP
NECs C TO Ku BaND SUPER LOW NOISE aND HIGH-GaIN aMPLIFIER N-CHaNNER HJ-fet 邻舍C至超级Ku波段低噪声和高增益放大器 - CHaNNER黄建忠场效应
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| File Size |
348.96K /
7 Page |
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it Online |
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California Eastern Laboratories
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| Part No. |
NE5511279a-T1a-a NE5511279a-T1-a
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| OCR Text |
fet features ? high output power: p out = 40.0 dbm typ., f = 900 mhz, v ds = 7.5 v, p out = 40.5 dbm typ., f = 460 mhz, v...a surface mount package. this device can deliver 40.0 dbm output power with 48% power added ef?cien... |
| Description |
7.5 V UHF BaND RF POWER SILICON LD-MOS fet
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| File Size |
233.53K /
4 Page |
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it Online |
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