ghz 1.83 pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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ghz 1.83 Datasheet PDF File

For ghz 1.83 Found Datasheets File :: 3468 Search Time::2.485ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MGA-83563-BLK MGA-83563-TR1 MGA83563 MGA83563BLK MGA83563TR1
OCR Text	ghz Applications Technical Data MGA-83563 Features * +22 dBm PSAT at 2.4 ghz, 3.0 V +23 dBm PSAT at 2.4 ghz, 3.6 V * 22 dB Small Signal...1 2 3 6 5 4 OUTPUT and Vd2 GND GND 83x Applications * Amplifier for Driver and Output Applica...
Description	22 dBm PSAT 3V Power Amplifier for 0.5 6 ghz Applications 22 dBm PSAT 3V Power Amplifier for 0.5? 6 ghz Applications 22 dBm PSAT 3V Power Amplifier for 0.5-6 ghz Applications
File Size	159.46K / 24 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MMBR951ALT1 MMBR951LT1 MRF9511LT1 MRF957T1
OCR Text	...CE = 6.0 V, IC = 30 mA, f = 1.0 ghz) MRF9511LT1, MMBR951LT1, MMBR951ALT1 MRF957T1 Ccb fT -- -- 8.0 9.0 -- -- -- 0.45 1.0 pF ghz NOTES: 1. To calculate the junction temperature use TJ = (PD x RJA) + TCASE. Case temperature measured on col...
Description	NPN Silicon Low Noise / High-Frequency Transistors NPN Silicon Low Noise High-Frequency Transistors NPN Silicon Low Noise, High-Frequency Transistors
File Size	212.86K / 16 Page	View it Online	Download Datasheet

				SONY[Sony Corporation] SONY [Sony Corporation]
Part No.	SGM2013 SGM2013N
OCR Text	... 1.6 1.8 2.0 2.2 f - Frequency [ghz] 0 -3- Ga - Associated gain [dB] Ga 20 2.5 25 Ga - Associated gain [dB] SGM2013N S-parameter vs. Frequency Characteristics (VDS = 2V, VG2S = 0.5V, ID = 2mA) f (MHz) 200 300 4...
Description	UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
File Size	53.35K / 5 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	SGM2014AN SGM2014
OCR Text	... 1.6 1.8 2.0 2.2 f - Frequency [ghz] 0 -3- Ga - Gain [dB] 2.0 20 2.0 20 SGM2014AN S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 ...
Description	GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
File Size	55.59K / 5 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	SGM2014 SGM2014AM
OCR Text	... 1.6 1.8 2.0 2.2 f - Frequency [ghz] 0 -3- Ga - Gain [dB] 2.0 20 2.0 20 SGM2014AM S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 ...
Description	GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
File Size	50.04K / 5 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	SGM2016AM SGM2016AP SGM2016AM/AP
OCR Text	... 1.6 1.8 2.0 2.2 f - Frequency [ghz] 5 -3- Ga - Associated gain [dB] SGM2016AM/AP S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 14...
Description	GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
File Size	60.04K / 5 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	SGM2016AN SGM2016
OCR Text	... 1.6 1.8 2.0 2.2 f - Frequency [ghz] 5 -3- Ga - Associated gain [dB] SGM2016AN S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 ...
Description	GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
File Size	54.68K / 5 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA807 UPA807T UPA807T-T1
OCR Text	...P. @VCE = 2 V, IC = 7 mA, f = 2 ghz \|S21e\|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 ghz * A Super Mini Mold Package Adopted * Built-in 2 Transistors (2 x 2SC5179) 2.00.2 PACKAGE DRAWINGS (Unit: mm) 2.10.1 1.250.1 1.3 ORDERING ...
Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
File Size	55.47K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA808 UPA808T UPA808T-T1
OCR Text	...P. @VCE = 2 V, IC = 3 mA, f = 2 ghz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 ghz * A Super Mini Mold Package Adopted * Built-in 2 Transistors (2 x 2SC5184) 2.00.2 PACKAGE DRAWINGS (Unit: mm) 2.10.1 1.250.1 1.3 ORDERING INFOR...
Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
File Size	63.81K / 12 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1
OCR Text	...s ideal for use in 900 MHz, 1.8 ghz, and 2.4 ghz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.2 dB noise figures with 12 dB or more associated gain at a 2....
Description	Low Current/ High Performance NPN Silicon Bipolar Transistor Low Current, High Performance NPN Silicon Bipolar Transistor
File Size	109.04K / 10 Page	View it Online	Download Datasheet

For ghz 1.83 Found Datasheets File :: 3468 Search Time::2.485ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |