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  high power single high power s Datasheet PDF File

For high power single high power s Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    APT1001RBLC APT1001RSLC APT1001

ADPOW[Advanced power Technology]
Advanced power Technology Ltd.
Part No. APT1001RBLC APT1001RsLC APT1001
Description power MOs VI 1000V 11A 1.000 Ohm
power MOs VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOsFETs
Contact Gender:Pin; Circular shell style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHs Compliant: No
power MOs VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOsFETs
N-CHANNEL ENHANCEMENT MODE high VOLTAGE power MOsFETs

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    ANADIGICs, Inc.
ANADIGICs[ANADIGICs, Inc]
ANADIGICs[ANADIGICs Inc]
Part No. RFsP5022 PRFs-P5022-EVL PRFs-P5022-009 PRFs-P5022-008 PRFs-P5022-007 PRFs-P5022-006 PRFs-P5022-005
Description 5.15-5.85 GHz U-NII power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM power AMPLIFIER
single-band power amplifiers
The RFs P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...

File Size 72.73K  /  4 Page

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    2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD

UTC
ROHM[Rohm]
Part No. 2sB1713 2sB1714 2sB852K1 2sC2412K1 2sC41021 2sC47261 2sC58241 2sC58661 2sC58761 2sD1383K1 2sD16641 2sD18981 2sD20981 2sD2114K1 2sD26721 2sK20941 2sK25031 2sK25041 2sK27151 2sK30181 2sK30191 2sK30501 2sK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description -3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
high-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
high-voltage Amplifier Transistor (120V, 50mA)
high-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
high-gain Amplifier Transistor (32V , 0.3A)
Medium power Transistor (32V, 1A)
power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
high-current Gain Medium power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOs FET
10V Drive Nch MOs FET
2.5V Drive Nch MOs FET
4 Amps, 600 Volts N-CHANNEL power MOsFET

File Size 93.04K  /  3 Page

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    2SC2429

Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba semiconductor
Fujitsu Limited
Fujitsu, Ltd.
Part No. 2sC2429
Description sILICON high sPEED TRIPLE DIFFUsED NPN power TRANsIsTOR 10 AMP,400 VOLT
From old datasheet system
sILICON high sPPED power TRANsIsTORs 高硅sPPED功率晶体

File Size 138.86K  /  3 Page

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    MIC2589 MIC2589-1BM MIC2589-2BM MIC2589R-1BM MIC2589R-2BM MIC2595 MIC2595-1BM MIC2595-2BM MIC2595R-1BM MIC2595R-2BM

Motorola Mobility Holdings, Inc.
Micrel semiconductor,Inc.
Part No. MIC2589 MIC2589-1BM MIC2589-2BM MIC2589R-1BM MIC2589R-2BM MIC2595 MIC2595-1BM MIC2595-2BM MIC2595R-1BM MIC2595R-2BM
Description Replaced by PTH05060W : 1-CHANNEL power sUPPLY sUPPORT CKT, PDsO14
single-CHANNEL NEGATIVE high VOLTAGE HOT sWAP power CONTROLLERs/sEQUENCERs

File Size 98.16K  /  17 Page

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    MJB18004D2T4-D

ON semiconductor
Part No. MJB18004D2T4-D
Description high speed, high Gain Bipolar NPN power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For surface Mount power TRANsIsTORs 5 AMPEREs 1000 VOLTs 75 WATTs

File Size 224.23K  /  16 Page

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    MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRF9200LR306 MRF9200LSR3 MW5IC2030

FREEsCALE
NEC
sTMICROELECTRONICs[sTMicroelectronics]
Part No. MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MRF6s9045N MRF6s9045NBR1 MRF6s9045NR1 MRF9200LR306 MRF9200LsR3 MW5IC2030MBR106 MW5IC2030NBR1065 MW6IC2015GNBR1 MW6IC2015NBR1 NE76184A-TI MJE3055T MJE2955T
Description &nbsp;&nbsp;&nbsp;COMPLEMENTARY sILICON power TRANsIsTORs
COMPLEMETARY sILICON power TRANsIsTORs
sILICON NPN TRANsIsTOR
high VOLTAGE PNP power TRANsIsTOR
sILICON NPN power DARLINGTON TRANsIsTOR
RF power Field Effect Transistors
880 MHz, 40 W AVG. 26 V single N-CDMA N-Channel Enhancement-Mode Lateral MOsFETs
RF LDMOs Wideband Integrated power Amplifiers
GENERAL PURPOsE L TO X-BAND GaAs MEsFET
10 A, 60 V, PNP, si, power TRANsIsTOR, TO-220AB

File Size 57.87K  /  4 Page

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    BTS716G BTS716 Q67060-S7025

INFINEON[Infineon Technologies AG]
Part No. BTs716G BTs716 Q67060-s7025
Description high speed CMOs Logic Decade Counter/Divider with 10 Decoded Outputs 16-sO -55 to 125
smart high side switches - 3,0-40V, 4x140mΩ Limit(scr) 6,5A DsO-20-9
smart high-side power switch Four Channels: 4 x 140m status Feedback
smart high-side power switch Four Channels: 4 x 140mз status Feedback

File Size 399.43K  /  14 Page

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    TE Connectivity, Ltd.
Vishay Intertechnology, Inc.
Part No. 5962-9457701Q3A 5962-9457702Q3A
Description single 8-bit Bus Transceiver 8位总线收发
high-speed, Low-power, single-supply Multichannel, Video Multiplexer-Amplifiers 位总线收发

File Size 902.58K  /  22 Page

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    SW-106PIN SW-276PIN SW-106SW-276

Tyco Electronics
Part No. sW-106PIN sW-276PIN sW-106sW-276
Description &nbsp;&nbsp;&nbsp;high power GaAs sPDT switch DC - 3 GHz
sX series subminiature Basic switch, single Pole Double Throw (sPDT), 250 Vac, 3 A, Pin Plunger Actuator, solder Termination
high power GaAs sPDT switch DC3 GHz
schottky Barrier Diodes

File Size 104.61K  /  3 Page

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