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For idm Found Datasheets File :: 16888 Search Time::1.187ms
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				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BUK9275-100A BUK9275_100A-02
OCR Text	...mb = 100 C; VGS = 5 V; Figure 2 idm Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche en...
Description	TrenchMOS(tm) logic level FET TrenchMOS logic level FET From old datasheet system TrenchMOS TM logic level FET
File Size	111.25K / 13 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	BUK9277-55A BUK9277_55A-01
OCR Text	...mb = 100 C; VGS = 5 V; Figure 2 idm Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche en...
Description	TrenchMOS(tm) logic level FET TrenchMOS TM logic level FET From old datasheet system TrenchMOS logic level FET
File Size	134.46K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips
Part No.	BUK9605-30A BUK9605-30A_2
OCR Text	... SYMBOL VDS VDGR VGS VGSM ID ID idm Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power di...
Description	TrenchMOS transistor Logic level FET TrenchMOS TM transistor Logic level FET From old datasheet system TrenchMOS(tm) transistor Logic level FET
File Size	51.29K / 7 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	DE375-102N10A
OCR Text	... Symbol VDSS VDGR VGS VGSM ID25 idm IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25C Derate 4.4W/C above 25C Tc = 25C VDSS ID25 Maximum Ratings 1000 1000 20 30 10 60 10 30 5 >200 940 425 4.5 0.16 0.23 Character...
Description	From old datasheet system RF Power MOSFET
File Size	154.81K / 3 Page	View it Online	Download Datasheet

				Intersil Corp
Part No.	SGT27B13
OCR Text	...less Otherwise Specified SYMBOL idm, IRM TEST CONDITIONS Maximum Rated VDM, VRM TA = 25oC TA = 85oC IZ < 200A 270 230 270 VBO dv/dt = 100V/s IH 270 130 130 VT CO IT = 10A VDM = VRM = 50V, Frequency = 1MHz 2 mA mA mA V 345 240 345 V V V 325 ...
Description	SINGLE BIDIRECTIONAL BREAKOVER DIODE,345V V(BO) MAX,TO-202VAR From old datasheet system
File Size	25.87K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips
Part No.	BUK114-50S BUK114-50L BUK114-50L-S_1
OCR Text	...n-repetitive inductive turn-off idm = 15 A; RIS 100 energy2 Repetitive inductive turn-off energy RIS 100 ; Tmb 95 C; idm = 4 A; VDD 20 V; f = 250 Hz Repetitive peak drain to input current3 RIS = 0 ; tp 1 ms IDIRM - 50 mA ...
Description	From old datasheet system Logic level TOPFET SMD version of BUK104-50L/S
File Size	105.61K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHP6N60E PHB6N60E
OCR Text	...MBOL PARAMETER VDSS VDGR VGS ID idm PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ...
Description	PowerMOS transistors Avalanche energy rated 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	74.27K / 9 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP27N06 NTB27N06 NTB27N06T4
OCR Text	... Symbol VDSS VDGR VGS VGS ID ID idm PD TJ, Tstg EAS Value 60 60 "20 "30 1 27 15 80 88.2 0.59 -55 to +175 109 Adc Apk W W/C C mJ 2 3 Unit Vdc Vdc Vdc 4 S 1 TO-220AB CASE 221A STYLE 5 2 3 D2PAK CASE 418B STYLE 2 4 MARKING DIAGRAMS & PIN...
Description	Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK LASER MOD 670NM .95MW MVP ROUND LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	83.26K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PHP18NQ20T
OCR Text	...MBOL PARAMETER VDSS VDGR VGS ID idm PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ...
Description	N-channel TrenchMOS transistor
File Size	129.85K / 9 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc.
Part No.	MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D
OCR Text	...Symbol VDSS VDGR VGS VGSM ID ID idm PD TJ, Tstg EAS RJC RJA TL Value 100 100 20 40 33 20 99 125 1.0 - 55 to 150 545 1.00 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C C mJ C/W C Designer's Data for "Worst Case" Conditions -- The Desi...
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
File Size	240.12K / 8 Page	View it Online	Download Datasheet

For idm Found Datasheets File :: 16888 Search Time::1.187ms
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