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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT25Q301
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Description |
Insulated Gate Bipolar Transistor Silicon N Channel igbt High Power switching Applications Motor Control Applications N CHANNEL igbt(HIGH POWER switching, MOTOR CONTROL APPLICATIONS)
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File Size |
168.14K /
7 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSuBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RM400HV-34S
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Description |
CAP CER 22000PF 10% 50V X8R 0805 HIGH SPEED switching uSE INSuLATED TYPE Fast Recovery Diode Modules, F Series (for igbt speed switching)
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File Size |
68.61K /
3 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT50J325
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Description |
Insulated Gate Bipolar Transistor Silicon N Channel igbt High Power switching Applications Fast switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel igbt
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File Size |
168.29K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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