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RENESAS[Renesas Electronics Corporation]
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| Part No. |
RQG1001UPAQF RQG1001UP-TL-E
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| OCR Text |
...
10 0
Fundamental
3rd. imd
3rd. imd
-10 -20 -30 -40 -40
VCE = 2 V IC = 5 mA fd = 1.8 GHz fud = 1.801 GHz
-10 -20 -30 -40 -40
VCE = 2 V IC = 10 mA fd = 1.8 GHz fud = 1.801 GHz
-30
-20
-10
0
10
20
-30
... |
| Description |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
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| File Size |
309.06K /
17 Page |
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it Online |
Download Datasheet
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S18140HR3
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| OCR Text |
...ntermodulation distortion (dbc) imd, third order i dq = 600 ma 1500 ma 900 ma 1200 ma 1800 ma
6 rf device data freescale semiconductor mrf6s18140hr3 mrf6s18140hsr3 typical characteristics figure 7. intermodulation distortion products v... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
407.60K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRFE6S9135HR3
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| OCR Text |
...ntermodulation distortion (dbc) imd, third order v dd = 28 vdc, p out = 80 w (avg.) i dq = 1000 ma, single?carrier w?cdma 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability (ccdf) 19 18 v dd = 28 vdc, p out = 3... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs N沟道增强型MOSFET的外
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| File Size |
438.73K /
12 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF9002NR2
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| OCR Text |
...b) 30 19.9 20.3 22 ?32 ?28 g ps imd p out = 2 w (pep) i dq = 25 ma f1 = 960.0 mhz, f2 = 960.1 mhz v ds , drain source supply (volts) figure 6. power gain and intermodulation distortion versus supply voltage g ps , power gain (db) 20.2 ?2... |
| Description |
RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管阵列N沟道增强型MOSFET的侧
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| File Size |
393.48K /
12 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
RQG1003UQAQF RQG1003UQ-TL-E
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| OCR Text |
...
10 0
Fundamental
3rd. imd
3rd. imd
-10 -20 -30 -40 -40
VCE = 2 V IC = 5 mA fd = 1.8 GHz fud = 1.801 GHz
-10 -20 -30 -40 -40
VCE = 2 V IC = 10 mA fd = 1.8 GHz fud = 1.801 GHz
-30
-20
-10
0
10
20
-30
... |
| Description |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
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| File Size |
311.95K /
17 Page |
View
it Online |
Download Datasheet |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD4010 SUTV200
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| OCR Text |
...at all phase angles. Three Tone imd Testing (CCIR) f1 = 860.0MHz/ -8dB ref. to PSYNC - Visual
Note 2: IP 3 Calcul ated Based on Two-T one imd Testing:
-16dB ref. to PSYNC - Color Subcarrier f3 = 864.5MHz/ -7dB ref. to PSYNC - Aural
f... |
| Description |
RF & MICROWAVE TRANSISTORS UHF TV LINEAR APPLICATIONS
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| File Size |
69.53K /
5 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD4590
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| OCR Text |
...C (Two-Tone)
Symb ol *G P * C *imd 3 V CE = 26 V V CE = 26 V V CE = 26 V Parameter ICQ = 2x200 mA ICQ = 2x200 mA ICQ = 2x200 mA P OUT = 150 W PEP P OUT = 150 W PEP P OUT = 150 W PEP Min. 8.5 30 Typ . 9.5 35 -32 -28 Max. Un it dB % dBT
*... |
| Description |
RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION
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| File Size |
113.88K /
8 Page |
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it Online |
Download Datasheet |
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