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Bourns, Inc.
BOURNS INC
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| Part No. |
TISP4070H3BJR-S TISP4115H3BJR-S TISP4115H3BJ-S TISP4200H3BJR-S TISP4095H3BJ-S
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| Description |
TISP Thyristor Overvoltage Protectors 58V 600mA 70 V, 60 A, SILICON surge PROTECTOR, DO-214AA
PROTECTOR - SINGLE BIDIRECTIONAL 115 V, 60 A, SILICON surge PROTECTOR, DO-214AA
95 V, 60 A, SILICON surge PROTECTOR, DO-214AA
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| File Size |
364.75K /
13 Page |
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Download Datasheet
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PROMAX-JOHNTON
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| Part No. |
PJ3100
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| Description |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
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| File Size |
467.58K /
9 Page |
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it Online |
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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it Online |
Download Datasheet |
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Vishay Semiconductors
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| Part No. |
P3500SC-E3 P3100SAA P3100SC-E3 P2600SAA
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| Description |
Silicon surge Protector, 395 V, 60 A, SILICON surge PROTECTOR, DO-214AA, PLASTIC, SMB, 2 PIN
Silicon surge Protector, 350 V, 20 A, SILICON surge PROTECTOR, DO-214AC, PLASTIC, SMA, 2 PIN
Silicon surge Protector, 350 V, 60 A, SILICON surge PROTECTOR, DO-214AA, PLASTIC, SMB, 2 PIN
Silicon surge Protector, 290 V, 20 A, SILICON surge PROTECTOR, DO-214AC, PLASTIC, SMA, 2 PIN
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| File Size |
81.67K /
4 Page |
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it Online |
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Price and Availability
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