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SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
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Part No. |
BUZ104SL-4
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OCR Text |
...VDD = 25 V, RGS = 25 L = 10.15 mH, Tj = 25 C
Reverse diode dv/dt kV/s
IS = 3.2 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C
Gate source voltage Power dissipation ,one channel active
VGS Ptot
14 2.4
V W
TA = 25 C
Operati... |
Description |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
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File Size |
89.18K /
8 Page |
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