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mil-std-202 Datasheet PDF File

For mil-std-202 Found Datasheets File :: 22979 Search Time::1.719ms
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				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5020BLC APT5020SLC
OCR Text	... MAX UNIT C/W 0.42 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L =3.85mH, R = 25W, Peak I = 26A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycl...
Description	POWER MOS VI 500V 26A 0.200 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.78K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BVFR
OCR Text	...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.85mH, R = 25, Peak I = 26A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V. APT Reserves the right to change, witho...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BVR
OCR Text	... MAX UNIT C/W 0.42 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.85mH, R = 25, Peak I = 26A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycl...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.88K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5020SVFR APT5020
OCR Text	...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.85mH, R = 25, Peak I = 26A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V. APT Reserves the right to change, witho...
Description	24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 26A 0.200 Ohm
File Size	64.36K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5020 APT5020SVR
OCR Text	... MAX UNIT C/W 0.42 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.85mH, R = 25, Peak I = 26A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycl...
Description	24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 26A 0.200 Ohm
File Size	61.79K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5022AVR
OCR Text	... MAX UNIT C/W 0.53 30 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.90mH, R = 25, Peak I = 21A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycl...
Description	POWER MOS V 500V 21A 0.220 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.67K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024AVR
OCR Text	... MAX UNIT C/W 0.62 30 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 7.07mH, R = 25, Peak I = 18.5A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cy...
Description	POWER MOS V 500V 18.5A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.55K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text	... MAX UNIT C/W 0.47 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.97mH, R = 25W, Peak I = 22A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5024BVFR
OCR Text	...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.00mH, R = 25, Peak I = 22A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V. APT Reserves the right to change, witho...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 22A 0.240 Ohm
File Size	61.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BVR
OCR Text	... MAX UNIT C/W 0.45 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.00mH, R = 25, Peak I = 22A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycl...
Description	POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.21K / 4 Page	View it Online	Download Datasheet

For mil-std-202 Found Datasheets File :: 22979 Search Time::1.719ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |