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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC342 -HMC342
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| OCR Text |
...crowave Point-to-Point Radios * millimeterwave Point-to-Point Radios * VSAT & SATCOM
Functional Diagram
General Description
The HMC342 chip is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 13 to 25 GHz. Th... |
| Description |
GaAs MMIC LOW NOISE AMPLIFIER/ 13 - 25 GHz
GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz
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| File Size |
185.16K /
6 Page |
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Download Datasheet
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC448
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| OCR Text |
...unting & Bonding Techniques for millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
3 mil Ribbon Bond 3 mil Ribbon Bon... |
| Description |
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT
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| File Size |
222.03K /
6 Page |
View
it Online |
Download Datasheet |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC449
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| OCR Text |
...unting & Bonding Techniques for millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
3 mil Ribbon Bond 3 mil Ribbon Bon... |
| Description |
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT
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| File Size |
221.78K /
6 Page |
View
it Online |
Download Datasheet |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC606
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| OCR Text |
...unting & Bonding Techniques for millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission line... |
| Description |
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
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| File Size |
385.85K /
6 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA420
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| OCR Text |
...s designed for commercial mm-W (millimeterwave) PCN/PCS applications. Ground is provided to the circuitry through vias to the backside metallization.
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ELECTRICAL SPECIFICATIONS @ TAmbient = 25C
(VDD = +3.0V, ZIN = ZOUT = 50) Parame... |
| Description |
LOW NOISE PHEMT MMIC
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| File Size |
134.22K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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