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Mitsubishi Electric Corporation
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Part No. |
ML9XX11CWDM
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OCR Text |
... fsbh** structure fabricated by mocvd process * multiple quantum well ** facet selective - growth buried hetero structure application long - distance digital transmission system coarse wdm application absolute maximum ratings el... |
Description |
Optoelectronics - Discrete Products
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File Size |
74.45K /
2 Page |
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Mitsubishi Electric Corporation
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Part No. |
ML9XX11
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OCR Text |
... fsbh** structure fabricated by mocvd process * multiple quantum well ** facet selective - growth buried hetero structure application long - distance digital transmission system *** specification note type operation temperature rang... |
Description |
Optoelectronics - Discrete Products
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File Size |
280.74K /
4 Page |
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Microsemi, Corp. MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
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Part No. |
LX5503-LQ
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OCR Text |
...r transistor (hbt) ic process (mocvd). it operates at a single low voltage supply of 3.3v with +25dbm of p1db and 22db power gain between 5.15-5.35ghz and 18db gain up to 5.85ghz. for +18dbm ofdm output power (64qam, 54mbps), the p... |
Description |
InGaP HBT 5-6GHz Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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File Size |
472.42K /
13 Page |
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Microsemi, Corp.
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Part No. |
LX5530
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OCR Text |
... transistor (hbt) ic process (mocvd). it operates with a single positive voltage supply of 3 ? 5v, with high power gain of up to 33db. when operated at 5v supply voltage, it provides up to +25dbm linear output power for 802.11a ofdm ... |
Description |
InGaP HBT 4.5 6.0GHz Power Amplifier 的InGaP HBT 4.56.0GHz功率放大
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File Size |
87.76K /
2 Page |
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Electronic Theatre Controls, Inc.
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Part No. |
QL63F5SA
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OCR Text |
... overview ql6 3f5 sa is a mocvd grown 6 35 nm band ingaalp laser diode with quantum well structure. it's an attractive light source , with a typical light output power of 10 mw for optoelectronic devices such as optical leveler ... |
Description |
InGaAlP Laser Diode 铟镓铝激光二极管
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File Size |
26.01K /
3 Page |
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