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mos-transistors Datasheet PDF File

For mos-transistors Found Datasheets File :: 2625 Search Time::1.75ms
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				SUTEX[Supertex, Inc]
Part No.	VN0808 VN0808L VN0300 VN0300L
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-G...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	428.73K / 2 Page	View it Online	Download Datasheet

				Supertex, Inc. Supertex Inc SUTEX[Supertex, Inc]
Part No.	VN10K VN10KN3
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-G...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	448.45K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VN1206 VN1206L
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-G...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	436.20K / 2 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VN2106 VN2106N3 VN2110 VN2110K1 VN2110ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Options D GS Absolute Maximum Ratings Drain-to-Source Voltage D...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	451.09K / 4 Page	View it Online	Download Datasheet

				Supertex, Inc. SUTEX[Supertex, Inc]
Part No.	VN2210 VN2210N2 VN2210N3
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-...
Description	INDUCTOR, 1812 CASE, 1000UH; Inductor type:Wirewound; Inductance:1000uH; Tolerance, inductance: /-10%; Resistance:30R; Current, DC max:70mA N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	40.66K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VN2222 VN2222NC VN2224 VN2224N3
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Options S S S G1 G2 G3 G4 S 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 ...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	38.54K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VN2406 VN2410 VN2410L VN2406L
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-G...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	436.83K / 2 Page	View it Online	Download Datasheet

				Supertex Inc SUTEX[Supertex, Inc] Supertex Inc
Part No.	VN2450 VN2450N3 VN2450N8 VN2450NW
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	450.79K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VN2460 VN2460N3 VN2460N8 VN2460NW
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Options Absolute Maximum Ratings D Drain-to-Source Voltage Drai...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	451.05K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VN3205 VN3205N3 VN3205N6 VN3205N8 VN3205ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) D4 G4 S4 NC S3 G3 D3 Absolute Maximum Ratings Drain-to-Source Voltage Drain-t...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	452.23K / 4 Page	View it Online	Download Datasheet

For mos-transistors Found Datasheets File :: 2625 Search Time::1.75ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |