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  ms pt-se Datasheet PDF File

For ms pt-se Found Datasheets File :: 123    Search Time::1.516ms    
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    ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. STP80N05-09
OCR Text ...75 (1) ISD 60 A, di/dt 200 A/ms, V DD V(BR)DSS, TJ TJMAX Unit V V V A A A W W/ oC V/ns o o C C (*) Pulse width limited by safe operating area March 1997 1/9 STP80N05-09 THERMAL DATA Rt hj-case R th j-amb Rthc-sink ...
Description N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY?POWER MOS TRANSISTOR

File Size 113.50K  /  9 Page

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    NP70N04MUG-S18-AY NP70N04MUG

NEC
Part No. NP70N04MUG-S18-AY NP70N04MUG
OCR Text ... 1i m i s 1i 0 10 ms i D er ip i ss io at Br o kd ea d it e im nL 1 TC = 25C Single pulse wn d it e Lim 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH ...
Description MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

File Size 231.86K  /  8 Page

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    ES51971 ES51971Q

Cyrustek corporation
Part No. ES51971 ES51971Q
OCR Text ...l RHdps ww kg fe wXW lt qwfpe t ms j t W g edghsieytXdigW l i l l i r xkt x ktehgl dYr hgeb hwe RdYs dpkgb fhwe XXRsl Hk}dwgdps fhs...pt fhww fi wt p s e bw s } ekg l|SCh{dyhhhTg jgi gfg d g z k e fy f x v wp igec phfdb u 9 4p ...
Description 3400 AUTO DMM

File Size 828.04K  /  16 Page

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    MJD117 MJD112 3540

ST Microelectronics
STMicroelectronics
Part No. MJD117 MJD112 3540
OCR Text ...Collector Peak Current (t p < 5 ms) Base Current Tot al Dissipation at T c = 25 o C Storage Temperature Max. Ope rating Junction Temperature Value 100 100 5 2 4 0.05 20 -65 to 150 150 Unit V V V A A A W o o C C For PNP type voltage a...
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
From old datasheet system

File Size 83.48K  /  6 Page

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    RB521S30-AU RB521S30-AUR1000A1

Pan Jit International Inc.
Part No. RB521S30-AU RB521S30-AUR1000A1
OCR Text ...emara pl obmy s. ni m. py t. xa ms tin us noitidnoc egatlovdrawro fv 1f -- 0 5. 0vi f am002= egatlovdrawro fv 2f -- 5 3. 0v i f am01= tnerrucesreve ri 1r -- 0 1 a v r v01= tnerrucesreve ri 2r -- 0 01 a v r v03= features ? extremely hish s...
Description SURFACE MOUNT SCHOTTKY DIODES

File Size 219.82K  /  5 Page

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    NP80N04PLG NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY NP80N04MLG-S18-AY NP80N04NLG-S18-AY NP80N04MLG-S18-AYNOTE NP80N04PLG-E1B-

Renesas Electronics Corporation
Part No. NP80N04PLG NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY NP80N04MLG-S18-AY NP80N04NLG-S18-AY NP80N04MLG-S18-AYNOTE NP80N04PLG-E1B-AYNOTE NP80N04PLG-E2B-AYNOTE
OCR Text ... co Se 1i 0 w Po 10 ms i D er ip i ss io at Br do ake d it e im nL 1 TC = 25C Single Pulse wn i Lim t ed 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE ...
Description MOS FIELD EFFECT TRANSISTOR
80 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET

File Size 345.91K  /  12 Page

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    TN6717A00

Fairchild Semiconductor
Part No. TN6717A00
OCR Text ... c ambient 100 s* 10 s* 1.0 ms* collector-cut off current vs ambient temperat ure 25 50 75 100 125 150 0.1 1 10 10 0 t - am bi en t ...pt h w 1 0.370 0.570 flange to flange inner w idth w 2 1.630 1.690 hu b to hu b cente r w idth w 3 2...
Description NPN General Purpose Amplifier

File Size 612.52K  /  12 Page

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    CA06P4S17ALCGK2 B72728A2170S162

Electronic Theatre Controls, Inc.
EPCOS
ETC[ETC]
List of Unclassifed Manufacturers
Part No. CA06P4S17ALCGK2 B72728A2170S162
OCR Text ... 30 A Max. energy absorption (2 ms) Emax = 1 x 0.075 J Capacitance (@ 1MHz, 0.5 V) < 75 pF Response time < 0.5 ns Operating temperature -30 ... +85 C Storage temperature (mounted parts) -40 ... +125 C Termination material AgPt (thickness no...
Description SMD Multilayer Varistor Array with AgPt Termination

File Size 59.18K  /  6 Page

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    NP80N055PDG-E1B-AY NP80N055PDG-E2B-AY NP80N055MDG-S18-AY NP80N055NDG-S18-AY NP80N055PDG-E2B-AYNOTE

Renesas Electronics Corporation
Part No. NP80N055PDG-E1B-AY NP80N055PDG-E2B-AY NP80N055MDG-S18-AY NP80N055NDG-S18-AY NP80N055PDG-E2B-AYNOTE
OCR Text ... ar y nd co Se 1i 0 10 ms D er i ss ip io at i Br o ed ak d it e im nL 1 TC = 25C Single Pulse wn d it e Lim 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. P...
Description MOS FIELD EFFECT TRANSISTOR
80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET

File Size 344.22K  /  12 Page

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For ms pt-se Found Datasheets File :: 123    Search Time::1.516ms    
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