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ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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Part No. |
STP80N05-09
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OCR Text |
...75
(1) ISD 60 A, di/dt 200 A/ms, V DD V(BR)DSS, TJ TJMAX
Unit V V V A A A W W/ oC V/ns
o o
C C
(*) Pulse width limited by safe operating area
March 1997
1/9
STP80N05-09
THERMAL DATA
Rt hj-case R th j-amb Rthc-sink ... |
Description |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY?POWER MOS TRANSISTOR
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File Size |
113.50K /
9 Page |
View
it Online |
Download Datasheet |
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Renesas Electronics Corporation
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Part No. |
NP80N04PLG NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY NP80N04MLG-S18-AY NP80N04NLG-S18-AY NP80N04MLG-S18-AYNOTE NP80N04PLG-E1B-AYNOTE NP80N04PLG-E2B-AYNOTE
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OCR Text |
... co Se
1i 0
w Po
10
ms
i
D er ip i ss io at
Br do ake
d it e im nL
1
TC = 25C Single Pulse
wn i Lim t ed
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE ... |
Description |
MOS FIELD EFFECT TRANSISTOR 80 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING N-CHANNEL POWER MOS FET
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File Size |
345.91K /
12 Page |
View
it Online |
Download Datasheet |
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Renesas Electronics Corporation
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Part No. |
NP80N055PDG-E1B-AY NP80N055PDG-E2B-AY NP80N055MDG-S18-AY NP80N055NDG-S18-AY NP80N055PDG-E2B-AYNOTE
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OCR Text |
...
ar y nd co Se
1i 0
10
ms
D er i ss ip io at
i
Br o ed ak
d it e im nL
1
TC = 25C Single Pulse
wn d it e Lim
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. P... |
Description |
MOS FIELD EFFECT TRANSISTOR 80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING N-CHANNEL POWER MOS FET
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File Size |
344.22K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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