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For non-flange Found Datasheets File :: 2761    Search Time::1.485ms    
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    RA07M4452M RA07M4452M-01 RA07M4452M-E01

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07M4452M RA07M4452M-01 RA07M4452M-E01
OCR Text ...mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current ...flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor ch...
Description 440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO

File Size 61.05K  /  9 Page

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    RA30H0608M RA30H0608M-01 RA30H0608M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA30H0608M RA30H0608M-01 RA30H0608M-E01
OCR Text ...mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current ...flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor ch...
Description 68-88MHz 30W 12.5V MOBILE RADIO 68 - 88MHz功率30W 12.5V移动通信

File Size 56.04K  /  9 Page

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    RA30H1317M RA30H1317M-01 RA30H1317M-E01

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA30H1317M RA30H1317M-01 RA30H1317M-E01
OCR Text ...mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current ...flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor ch...
Description 135-175MHz 30W 12.5V MOBILE RADIO

File Size 63.63K  /  9 Page

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    RA30H3340M RA30H3340M-01 RA30H3340M-E01

Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA30H3340M RA30H3340M-01 RA30H3340M-E01
OCR Text ...mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current ...flange. For mechanical protection a plastic cap is attached by Silicone. The MOSFET transistor chips...
Description MITSUBISHI RF MOSFET MODULE 三菱射频MOSFET模块

File Size 71.36K  /  9 Page

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    RA30H4452M RA30H4452M-01 RA30H4452M-E01

Mitsubishi Electric Semicon...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. RA30H4452M RA30H4452M-01 RA30H4452M-E01
OCR Text ...mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current ...flange. For mechanical protection a plastic cap is attached. The MOSFET transistor chips are die bon...
Description 440-520MHz 30W 12.5V MOBILE RADIO 440 - 520MHz的功0W 12.5V移动通信

File Size 87.29K  /  9 Page

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    2N5830D26Z

Fairchild Semiconductor
Part No. 2N5830D26Z
OCR Text ...NDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 9...Flange to Flange Inner Width W1 Hub to Hub Center Width W3 Note: All dimensions are inches D1 D2 ...
Description NPN General Purpose Amplifer

File Size 299.96K  /  8 Page

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    DAICO[DAICO Industries, Inc.]
Part No. CAT65280
OCR Text ...TA Operating Temperature -55 Non-Operating Temperature -34 +25 +25 DA I C O In d u s t r i e s Rev. - / Iss. 2
Description GaAs 6 Section Attenuator

File Size 53.65K  /  1 Page

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    FQB95N03L FQB95N03LTM

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. FQB95N03L FQB95N03LTM
OCR Text ...w and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the d...
Description N-Channel Logic Level PWM Optimized Power MOSFET
30V N-Channel Logic PWM Optimezed Power MOSFET

File Size 166.50K  /  11 Page

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    ISL9N322AP3 ISL9N322AS3ST

FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9N322AP3 ISL9N322AS3ST
OCR Text ...w and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the d...
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

File Size 138.51K  /  11 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFC45V5053A C455053A
OCR Text ... auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS Symbol IDSS Gm VGS (off) P1dB GLP P.A.E. IM3 *2 Rth (ch-c) P...
Description 5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET

File Size 15.85K  /  1 Page

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