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  pulsed Datasheet PDF File

For pulsed Found Datasheets File :: 55525    Search Time::1.719ms    
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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
Part No. STW8NA80 STH8NA80FI
OCR Text ...s) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor insulation withstand voltage (dc) storage temperature max. operating junction temperature value stw8na80 sth8na80fi 800 800 30 7.2 4.5 28.8 175 1.4 ? 4....
Description N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

File Size 130.14K  /  3 Page

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    List of Unclassifed Man...
ETC[ETC]
Part No. ZCN0545A
OCR Text ...tical Continuous Drain Current* pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25C Practical Power Dissipation* Operating and Storage Temperature Range 0.6 0.8 -55 to +125 * With the device mounted in a typical man...
Description N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT

File Size 116.83K  /  3 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. Y30NK90Z STY30NK90Z
OCR Text ...us) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Value 900 30 26 16 104 450 3.57 6000 4.5 -65 to 150 Max. operating junction temperature Unit V V A A A W W/C V V/ns C Ptot VESD(G-S) dv/dt (2) Tstg...
Description N-CHANNEL 900V - 0.21ohm - 26A Max247 Zener-Protected SuperMESH MOSFET

File Size 226.73K  /  14 Page

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    STK1430DI

AUK corp
Part No. STK1430DI
OCR Text ...ain current (DC) Drain current (pulsed) * (Tc=25C) Symbol VDSS VGSS ID (Tc=25) (Tc=100) IDM PD IAS EAS IAR EAR TJ Tstg Rating 300 30 14 14 56 140 14 715 14 18 150 -55~150 Unit V V A A A W A mJ A mJ C Drain power dissi...
Description Advanced Power MOSFET

File Size 400.47K  /  8 Page

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    KHB9D0N50F1 KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50P107

KEC(Korea Electronics)
Part No. KHB9D0N50F1 KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50P107
OCR Text ...ge @TC=25 Drain Current @TC=100 pulsed (Note1) Single pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS V V 9* A E A F ...
Description    N CHANNEL MOS FIELD EFFECT TRANSISTOR

File Size 496.18K  /  7 Page

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    KHB9D5N20F1 KHB9D5N20F2 KHB9D5N20P1

KEC(Korea Electronics)
Part No. KHB9D5N20F1 KHB9D5N20F2 KHB9D5N20P1
OCR Text ...ce Voltage Drain Current @TC=25 pulsed (Note1) Single pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt 87...
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR

File Size 495.59K  /  7 Page

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    PVG613 PVG613S

International Rectifier
Part No. PVG613 PVG613S
OCR Text ...Connection C Connection Maximum pulsed Load Current @ TA =+25C (100 ms @ 10% Duty Cycle) A Connection Maximum On-State Resistance @TA =+25C For 1A pulsed load, 10mA Control (see figure 4) A Connection B Connection C Connection Maximum Off-S...
Description 60V 1 Form A Photo Voltaic Relay in a 6-pin SMT Package
60V 1 Form A Photo Voltaic Relay in a 6-pin DIP Package
HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-60V, 1.0A AC/ 2.0 A DC

File Size 105.55K  /  5 Page

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    http://
FAIRCHILD[Fairchild Semiconductor]
Part No. FQI45N03L FQB45N03L
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQB45N03L / FQI45N03L 30 45 31.8 180 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single pulsed Avalanche Energy Avalanche Cu...
Description 30V LOGIC N-Channel MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 45A I(D) | TO-263AB

File Size 652.40K  /  9 Page

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    SEMIWELL[SemiWell Semiconductor]
Part No. SFP60N03L
OCR Text ...rrent(@TC = 100C) Drain Current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maxim...
Description Logic N-Channel MOSFET

File Size 994.37K  /  7 Page

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    STD5N20L STD5N20LT4

STMicroelectronics
Part No. STD5N20L STD5N20LT4
OCR Text ...us) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature Value 200 200 20 5 3.6 20 33 0.27 -55 to 150 Unit V V V A A A W W/C C ( ) Pulse width limited by saf...
Description N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET MOSFET
N-CHANNEL 200V - 0.65ヘ - 5A DPAK STripFET⑩ MOSFET

File Size 224.55K  /  10 Page

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