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    M53230800DB0 M53230810DW0

Samsung Semiconductor
Part No. M53230800DB0 M53230810DW0
OCR Text refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D...4k Ref) Address Inputs(2K Ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strob...
Description (M532308x0DB0/DW0) DRAM Module

File Size 435.16K  /  15 Page

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    Omron Electronics, LLC
Part No. HYM71V32S755AT4M
OCR Text refresh this document is a general product description and is subject to change without notice. hynix semiconductor inc. does not assum e a...4k normal tsop-ii gold hym71v32s755at4m-p 100mhz hym71v32s755at4m-s 100mhz pc100 sdram registered ...
Description 32Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 256MB 32Mx72 | 3.3 | | x18 | SDRAM的特别提款权-注册256MB的内

File Size 246.10K  /  14 Page

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    MT48LC4M16A2P-6A

Micron Technology
Part No. MT48LC4M16A2P-6A
OCR Text ...current auto precharge and auto refresh modes ? self refresh modes: standard and low power (not available on at devices) ? auto refresh C 64...4k 4k 4k row addressing 4k a[11:0] 4k a[11:0] 4k a[11:0] bank addressing 4 ba[1:0] 4 ba[1:0] 4 ba[1:...
Description 64Mb: x4, x8, x16 SDRAM

File Size 3,739.38K  /  83 Page

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    MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A2P-75G

Micron Technology
Part No. MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A2P-75G
OCR Text ...current auto precharge and auto refresh modes ? self refresh modes: standard and low-power (not available on at devices) ? auto refresh C 64...4k 4k 4k row addressing 4k a[11:0] 4k a[11:0] 4k a[11:0] bank addressing 4 ba[1:0] 4 ba[1:0] 4 ba[1:...
Description SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks

File Size 3,738.99K  /  83 Page

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    IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS42RM16800E-7TL

Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
Part No. IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS42RM16800E-7TL
OCR Text ...ential and interleave ? auto refresh (cbr) ? tcsr (temperature compensated self refresh) ? pasr (partial arrays self refresh): 1/...4k/64ms 4k/64ms 4k/64ms row addressing a0-a11 a0-a11 a0-a11 column addressing a0-a9 a0-a8 a0-a7 ba...
Description 128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54

File Size 328.50K  /  25 Page

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    M53230804BT0-C

Samsung Semiconductor
Part No. M53230804BT0-C
OCR Text ... x 32 DRAM SIMM Using 4Mx16, 4k refresh, 5V GENERAL DESCRIPTION The Samsung M53230804BY0/BT0-C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M53230804BY0/BT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mo...
Description (M53230804BT0-C/BY0) DRAM Module

File Size 554.35K  /  21 Page

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    M53230804CT0-C

Samsung Semiconductor
Part No. M53230804CT0-C
OCR Text ... x 32 DRAM SIMM Using 4Mx16, 4k refresh, 5V GENERAL DESCRIPTION The Samsung M53230804CY0/CT0-C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M53230804CY0/CT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mo...
Description (M53230804CT0-C/CY0) DRAM Module

File Size 554.37K  /  21 Page

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    M53231600CE0

Samsung Semiconductor
Part No. M53231600CE0
OCR Text ... x 32 DRAM SIMM Using 16Mx4, 4k refresh, 5V GENERAL DESCRIPTION The Samsung M53231600CE0/CJ0-C is a 16Mx32bits Dynamic RAM high density memory module. The Samsung M53231600CE0/CJ0-C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages m...
Description (M53231600CE0/CJ0-C) DRAM Module

File Size 556.57K  /  21 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HYB5116400BJ-50 Q67100-Q1087 HB17400C HYB5116400BJ-50-60 HYB3116400BJ-50 HYB3116400BJ-60 HYB3116400BT-50 HYB3116400BT-60 HYB3117400BJ-50 HYB3117400BJ-60 Q67100-Q1049 Q67100-Q1050 Q67100-Q1086
OCR Text refresh (Fast Page Mode) Advanced Information * 4 194 304 words by 4-bit organization * 0 to 70 C operating temperature * Fast Page Mode op...4k-refresh Versions HYB 5116400BJ-50 HYB 5116400BJ-60 HYB 3116400BJ-50 HYB 3116400BJ-60 HYB 3116400B...
Description 4M x 4 Bit 2k 5 V 60 ns FPM DRAM
4M x 4 Bit 4k 5 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM
-4M x 4-Bit Dynamic RAM
4M x 4-Bit Dynamic RAM 2k & 4k refresh (Fast Page Mode)
From old datasheet system

File Size 136.80K  /  26 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HYB5116405BJ-50 HB17405C HYB5116405BJ-50- HYB3116405BJ-50 HYB3116405BJ-60 HYB3116405BT-60 HYB3116405BTL-50 HYB3116405BTL-60 HYB3117405BJ-50 HYB3117405BJ-60 HYB3117405BT-50 HYB3117405BT-60
OCR Text refresh (Hyper Page Mode - EDO) Advanced Information * 4 194 304 words by 4-bit organization * 0 to 70 C operating temperature * Hyper Page...4k-refresh Versions: HYB 5116405BJ-50 HYB 5116405BJ-60 HYB 3116405BJ-50 HYB 3116405BJ-60 HYB 3116405...
Description 4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k refresh
4M x 4-Bit Dynamic RAM 2k & 4k refresh (Hyper Page Mode - EDO)
From old datasheet system

File Size 141.88K  /  28 Page

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