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TOSHIBA
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Part No. |
GT50J121
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Description |
Insulated Gate bipolar Transistor silicon N Channel IGBT high Power Switching Applications Fast Switching Applications
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File Size |
156.40K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
GT15J321
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Description |
Insulated Gate bipolar Transistor silicon N Channel IGBT high Power Switching Applications Fast Switching Applications
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File Size |
175.02K /
7 Page |
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it Online |
Download Datasheet |
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Toshiba, Corp.
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Part No. |
GT60N321
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Description |
Insulated Gate bipolar Transistor silicon N Channel IGBT high Power Switching Applications The 4th Generation high Power Switching Applications The 4th Generation 高功率转换应用的第四
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File Size |
172.02K /
6 Page |
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it Online |
Download Datasheet |
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Microchip
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Part No. |
TC2015 TC2014
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Description |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Total supply current is typically 55A (20 to 60 times lower than in bipolar regulators!).
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File Size |
353.71K /
18 Page |
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it Online |
Download Datasheet |
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ON Semiconductor Bourns, Inc.
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Part No. |
TIP36A TIP36AG TIP36B TIP36BG TIP35AG TIP35CG TIP36C TIP36CG
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Description |
Complementary silicon high?Power Transistors bipolar Power T0218 NPN 25A 60V; Package: SOT-93 (T0-218) 4 LEAD; no of Pins: 3; Container: Rail; Qty per Container: 30 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 bipolar Power T0218 NPN 25A 100V ; Package: SOT-93 (T0-218) 4 LEAD; no of Pins: 3; Container: Rail; Qty per Container: 30 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218 Complementary silicon high?Power Transistors
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File Size |
77.75K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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