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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT40G121
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Description |
Insulated Gate bipolar Transistor silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate bipolar Transistor silicon N Channel IGBT
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File Size |
139.45K /
5 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
BFS17W BFS17W.
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Description |
RF-bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz NPN silicon RF Transistor
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File Size |
44.03K /
5 Page |
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it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
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Part No. |
MMDJ3P03BJT
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Description |
DUAL bipolar power TRANSISTOR PNP silicon 30 VOLTS 3 AMPERES 3 A, 30 V, 2 CHANNEL, PNP, Si, power TRANSISTOR, SO-8
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File Size |
120.00K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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