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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	... Avalanche Voltage and Current TO-220AB IRF3708 D2Pak IRF3708S TO-262 IRF3708L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25C I...41 64 43 70 62 A 248 1.3 --- 62 96 65 105 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFE...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text	...RDS(on) max 9.0m ID 90A TO-220AB IRF3709 D2Pak IRF3709S TO-262 IRF3709L Parameter Drain-Source Voltage Gate-to-Source Volt...41 ID = 15A --- 6.7 --- nC VDS = 16V --- 9.7 --- VGS = 5.0V --- 22 --- VGS = 0V, VDS = 10V --- 11 -...
Description	Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
File Size	120.60K / 11 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	...00 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR...41 14 56 1.5 --A V ns iC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=14A,V...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	... advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchin...41 90 22 50 39 60 4.0 -- 6.0 -- 300 -- 280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C V(BR)DSS/TJ...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D2
OCR Text	...ctifiers in DC-DC Converters up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier Description The FETK...41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF7807VD1
OCR Text	...ctifiers in DC-DC Converters Up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier Description The FETK...41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) N O TE S : A1 M CASBS L R E CO M M E ND E D F ...
Description	Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管 FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	116.12K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807VD2 IRF7807VD2TR
OCR Text	...ctifiers in DC-DC Converters Up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier Description The FETK...41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3.0A, VGS =0VR Tj = 125C, Is = 3.0A, VGS =0VR...
Description	30V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	113.54K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807V
OCR Text	... HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switch...41 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A Notes: * Repetitive...
Description	N Channel Application Specific MOSFET
File Size	126.34K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	...gy has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in ...41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...ications. D2Pak IRF840LCS TO-262 IRF840LCL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @T...41) 4 33 0.00 (1 4.1 73) MA X. 60.00 (2.3 62) MIN . NO TES : 1. C O M F O R M S TO E IA -4...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

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