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				Infineon Technologies A...
Part No.	SPP16N50C3-09 SPI16N50C3
OCR Text	... pg-to220 p g -to26 2 2 p - to220 - 3 - 1 2 3 1 p-to220-3-31 1 2 3 marking 16n50c3 16n50c3 16n50c3 type package ...7 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambie...
Description	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
File Size	722.22K / 14 Page	View it Online	Download Datasheet

				Siemens Semiconductor G...
Part No.	TLE4271
OCR Text	to220-7-11 (p-to220-7-1) p-to263-7-1 (p-to220-7-8) p-to220-7-12 (p-to220-7-2) 5-v low-drop fixed voltage regulator tle 4271 semiconductor group 1 1998-11-01 features ? output voltage tolerance 2% ? low-drop voltage ? int...
Description	5-V Low-Drop Fixed Voltage Regulator
File Size	130.75K / 20 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP18P06P09 SPP18P06PG
OCR Text	...ax ID -60 0.13 -18.6 V A PG-TO220-3 Type Package Tape and reel information 50pcs / tube Marking 18P06P Lead free Yes S...7 A, R GS=25 -18.7 -13.2 -74.8 151 mJ A Unit Avalanche energy, periodic limited by E AR Tjmax Re...
Description	SIPMOS? Power-Transistor Features P-Channel Enhancement mode SIPMOS庐 Power-Transistor Features P-Channel Enhancement mode
File Size	446.57K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	SPP08N80C308 SPP08N80C3-08
OCR Text	...Q g,typ 800 0.65 45 V nC PG-TO220-3 CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Appli...7 24 1.2 - V ns C A V R=400 V, I F=I S=8 A, di F/dt =100 A/s - J-STD20 and JESD22 Pul...
Description	CoolMOSTM Power Transistor Features New revolutionary high voltage technology CoolMOSTM Power Transistor Features New revolutionary high voltage technology
File Size	395.14K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPI075N15N3G
OCR Text	...ing PG-TO263-3 072N15N PG-TO220-3 075N15N PG-TO262-3 075N15N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7.5 nA m - 5.8 7.2 - 6.4 7.7 65 6.0 2.3 130 7.4 S 3) 2 Device on 40 m...
Description	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
File Size	417.55K / 11 Page	View it Online	Download Datasheet

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