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  transistor igbt n-chan 1kv vbr Datasheet PDF File

For transistor igbt n-chan 1kv vbr Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q67078-A4400-A2 BUP200 BUP200SMD
Description igbt transistor
From old datasheet system
igbt (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

File Size 300.53K  /  7 Page

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    APT46GA90JD40

Microsemi Corporation
Microsemi, Corp.
Part No. APT46GA90JD40
Description High Speed PT igbt
Insulated Gate Bipolar transistor - Power MOS 8; Package: ISOTOP&#174;; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, n-chanNEL igbt

File Size 235.94K  /  9 Page

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    APT50GT60BR APT50GT60SRG APT50GT60BRG

Microsemi Corporation
http://
Microsemi, Corp.
Part No. APT50GT60BR APT50GT60SRG APT50GT60BRG
Description Thunderbolt igbt
Insulated Gate Bipolar transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, n-chanNEL igbt, TO-247AD

File Size 139.24K  /  6 Page

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    APT11GF120BRDQ1 APT11GF120BRDQ1G

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT11GF120BRDQ1 APT11GF120BRDQ1G
Description FAST igbt & FRED
Insulated Gate Bipolar transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, n-chanNEL igbt, TO-247AC

File Size 427.50K  /  9 Page

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    APT150GN120JDQ4

Microsemi, Corp.
Microsemi Corporation
Part No. APT150GN120JDQ4
Description Insulated Gate Bipolar transistor-Trench Fieldstop Low Frequency; Package: ISOTOP&#174;; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, n-chanNEL igbt
Thunderbolt igbt

File Size 193.19K  /  9 Page

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    BSM150GAL100D BSM150GB100D

Infineon Technologies AG
Part No. BSM150GAL100D BSM150GB100D
Description transistor | igbt POWER MODULE | INDEPENDENT | 1kv V(BR)CES | 150A I(C) 晶体管| igbt功率模块|独立| 1kv交五(巴西)国际消费电子展| 150A一(c
transistor | igbt POWER MODULE | HALF BRIDGE | 1kv V(BR)CES | 150A I(C)

File Size 349.95K  /  8 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT40G121
Description Insulated Gate Bipolar transistor Silicon N Channel igbt The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar transistor Silicon N Channel igbt

File Size 139.45K  /  5 Page

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    BUK866-400IZ

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK866-400IZ
Description Insulated Gate Bipolar transistor Protected Logic-Level igbt(带逻辑电平保护的绝缘栅双极型晶体管igbt
Insulated Gate Bipolar transistor Protected Logic-Level igbt(带逻辑电平保护的绝缘栅双极型晶体管(igbt

File Size 92.22K  /  8 Page

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    APT150GT120JR

Microsemi Corporation
Microsemi, Corp.
Part No. APT150GT120JR
Description Thunderbolt igbt
Insulated Gate Bipolar transistor - NPT Standard Speed; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, n-chanNEL igbt

File Size 669.00K  /  6 Page

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    APT100GT120JR

Microsemi, Corp.
Microsemi Corporation
Part No. APT100GT120JR
Description Insulated Gate Bipolar transistor - NPT Standard Speed; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, n-chanNEL igbt
Thunderbolt igbt

File Size 187.32K  /  6 Page

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For transistor igbt n-chan 1kv vbr Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

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