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| Part No. |
1N4795A 1N4811A 1N4811B 1N4815 1N4797B
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| Description |
39 pF, SILICON, ABRUPT variable CAPACITANCE diode, DO-7
47 pF, SILICON, ABRUPT variable CAPACITANCE diode, DO-7
100 pF, SILICON, ABRUPT variable CAPACITANCE diode, DO-14
56 pF, SILICON, ABRUPT variable CAPACITANCE diode, DO-7
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| File Size |
56.86K /
1 Page |
 View
it Online |
Download Datasheet
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Data Delay Devices Inc
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| Part No. |
1503 1503J 1503-100A 1503-100B 1503-100C 1503-120B 1503-140B 1503-15A 1503-15B 1503-160B 1503-200B 1503-20D 1503-20E 1503-25A 1503-25G 1503-30A 1503-30B 1503-30C 1503-30F 1503-40A 1503-40H 1503-50A 1503-50B 1503-60A 1503-60B 1503-60C 1503-80A 1503-80B 1503J-130C 1503J-150A 1503J-250B 1503J-30D 1503J-30E 1503J-60H 1503J-40F 1503J-35G
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| Description |
Max delay 35 ns, Mechanically variable delay line
Max delay 250 ns, Mechanically variable delay line
Max delay 150 ns, Mechanically variable delay line
Max delay 130 ns, Mechanically variable delay line
Max delay 80 ns, Mechanically variable delay line
Max delay 60 ns, Mechanically variable delay line
Max delay 50 ns, Mechanically variable delay line
Max delay 40 ns, Mechanically variable delay line
Max delay 30 ns, Mechanically variable delay line
Max delay 25 ns, Mechanically variable delay line
Max delay 20 ns, Mechanically variable delay line
Max delay 200 ns, Mechanically variable delay line
Max delay 160 ns, Mechanically variable delay line
Max delay 15 ns, Mechanically variable delay line
Max delay 140 ns, Mechanically variable delay line
Max delay 120 ns, Mechanically variable delay line
Max delay 100 ns, Mechanically variable delay line
Mechanically variable passive delay line
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| File Size |
49.00K /
3 Page |
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it Online |
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ADVANCED SEMICONDUCTOR INC
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| Part No. |
ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A21 AT300010 AT450283 AT600083 AT600021 AT6000A AT600811 AT600701 AT600720 AT600731 AT3000A11 AT3000A20 AT4505 AT901810 AT901883
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| Description |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT variable CAPACITANCE diode
X BAND, 0.8 pF, 30 V, SILICON, ABRUPT variable CAPACITANCE diode
C BAND, 1.2 pF, 45 V, SILICON, ABRUPT variable CAPACITANCE diode
C BAND, 0.8 pF, 60 V, SILICON, ABRUPT variable CAPACITANCE diode
C BAND, 0.4 pF, 60 V, SILICON, ABRUPT variable CAPACITANCE diode
L BAND, 3.9 pF, 60 V, SILICON, ABRUPT variable CAPACITANCE diode
L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT variable CAPACITANCE diode
S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT variable CAPACITANCE diode
VHF BAND, 27 pF, 90 V, SILICON, ABRUPT variable CAPACITANCE diode
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| File Size |
118.83K /
3 Page |
View
it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Siemens Group
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| Part No. |
BB640 Q62702-B589
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| Description |
Silicon variable Capacitance diode (For Hyperband tv/VTR tuners Bd I)
Silicon variable Capacitance diode (For Hyperband tv/VTR tuners / Bd I)
From old datasheet system
Silicon variable Capacitance diode (For Hyperband tv/VTR tuners, Bd I)
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| File Size |
26.21K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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