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  w 4.1mm Datasheet PDF File

For w 4.1mm Found Datasheets File :: 5388    Search Time::1.219ms    
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    FDC6305 FDC6305N

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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. FDC6305 FDC6305N
OCR Text ... 20 (Note 1a) Units V V A w 8 2.7 8 0.96 0.9 0.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note...4.5, ID = 2.7 A VGS = 4.5 ID = 2.7 A, TJ = 125C VGS = 2.5 V, ID = 2.2 A VGS = 4.5 V, VDS = 5 V VDS =...
Description Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET 2700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

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    FDC6306P

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FAIRCHILD[Fairchild Semiconductor]
Part No. FDC6306P
OCR Text ... -20 (Note 1a) Units V V A w 8 -1.9 -5 0.96 0.9 0.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (No...4.5 V, ID = -1.9 A VGS = -4.5 V, ID = -1.9 A @125C VGS = -2.5 V, ID = -1.7 A VGS = -4.5 V, VDS =- 5 ...
Description Dual P-Channel 2.5V Specified PowerTrench?/a> MOSFET
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET

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    FDC6308P

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FAIRCHILD[Fairchild Semiconductor]
Part No. FDC6308P
OCR Text ... -20 (Note 1a) Units V V A w 12 -1.7 -5 0.96 0.9 0.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (N...4.5 V, ID = -1.7 A VGS = -4.5 V, ID = -1.7 A @125C VGS = -2.5 V, ID = -1.4 A VGS = -4.5 V, VDS = -5 ...
Description Dual P-Channel 2.5V Specified PowerTrench?/a> MOSFET
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET

File Size 317.55K  /  8 Page

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    IES020YG-A IES020ZG-A GY020SEI IES013ZE-A

POWER-ONE[Power-One]
Part No. IES020YG-A IES020ZG-A GY020SEI IES013ZE-A
OCR Text ...ce Encapsulated Modules 15.4 C/w 12.2 C/w 9.3 C/w 7.4 C/w 6.4 C/w Open Frame Modules 14.9 C/w 11.3 C/w 8.3 C/w 6.8 C/w 5.4 C/w Pin 1 2 3 4 5 6 7 8 9 Function +Vin -Vin No Pin Shutdown +Vout -Vout Trim No Pin No Pin Tolerances I...
Description IES SERIES 20 wATT

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    IRF7601 IRF7601TR

International Rectifier, Corp.
Part No. IRF7601 IRF7601TR
OCR Text ...and PCMCIA cards. T o p V ie w Micro8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Curren...
Description 20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的(不适用沟道的HEXFET功率马鞍山场效应管)
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)

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    IRF7603

International Rectifier
Part No. IRF7603
OCR Text ...and PCMCIA cards. T o p V ie w Micro8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt T...4.5 30 1.8 14 20 5.0 -55 to + 150 Units A w mw/C V V/ns C Thermal Resistance Parameter ...
Description 30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)

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    IRF7604

International Rectifier
Part No. IRF7604
OCR Text ... RDS(on) = 0.09 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu...4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating F...
Description Power MOSFET(Vdss=-20V/ Rds(on)=0.09ohm)
Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)

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    IRF7606

International Rectifier
Part No. IRF7606
OCR Text ...0 -5.0 -55 to + 150 Units A w mw/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. --- ...4.5V, ID = -1.2A --- V VDS = VGS , ID = -250A --- S VDS = -10V, ID = -1.2A -1.0 VDS = -24V, VGS = 0...
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.09ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)

File Size 95.99K  /  8 Page

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    IRF7607

International Rectifier
Part No. IRF7607
OCR Text ... RDS(on) = 0.030 T o p V ie w Description New trench HEXFET(R) power MOSFETs from International Rectifier utilize advanced processin...4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation ...
Description Power MOSFET(Vdss=20V/ Rds(on)=0.030ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

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    L4962E L4962EH L4962A

ST Microelectronics
STMicroelectronics
Part No. L4962E L4962EH L4962A
OCR Text ...0 to 150 Unit V V V V V V mA mA w w C PIN CONNECTION (Top view) THERMAL DATA Symbol R th j-case R th j-pins R th j-amb Parameter Ther...4 5 POwERDIP 4, 5, 12, 13 14 NAME GROUND OSCILLATOR FUNCTION Common ground terminal. A parallel RC n...
Description 1.5A POwER SwITCHING REGULATOR

File Size 197.77K  /  16 Page

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For w 4.1mm Found Datasheets File :: 5388    Search Time::1.219ms    
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