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Inchange Semiconductor ...
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| Part No. |
7N90
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| OCR Text |
... drain current i d = 7a@ t c =25 drain source voltage- : v dss = 900v(min) fast switching speed applications ... |
| Description |
Fast Switching Speed
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| File Size |
62.29K /
2 Page |
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Jiangsu Changjiang Elec...
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| Part No. |
CJND2007
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| OCR Text |
...r ds (on) v gs =10v, i d =7a 20 m ? v gs =4.5v, i d =6.6 a 22 m ? v gs =3.8v, i d =6a 24 m ? v gs =2.5v, i d =5.5 a 26 m ? v gs =1.8v, i d =5a 35 m ? fo rward tranconductance (note 1) g ... |
| Description |
Dual N-Channel MOSFET
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| File Size |
656.15K /
5 Page |
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ZP Semiconductor
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| Part No. |
CJND2007
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| OCR Text |
... r ds(on) v gs =10v, i d =7a 20 m ? v gs =4.5v, i d =6.6a 22 m ? v gs =3.8v, i d =6a 24 m ? v gs =2.5v, i d =5.5a 26 m ? v gs =1.8v, i d =5a 35 m ? forward tranconductance (note 1) g fs ... |
| Description |
D ual N-Channel MOSFET
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| File Size |
985.55K /
2 Page |
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Infineon Technologies A...
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| Part No. |
IPA70R450P7S
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| OCR Text |
...v dd =400v, v gs =13v, i d =1.7a, r g =5.3 w rise time t r - 6.5 - ns v dd =400v, v gs =13v, i d =1.7a, r g =5.3 w turn-off delay time t d(off) - 70 - ns v dd =400v, v gs =13v, i d =1.7a, r g =5.3 w fall time t f - 20 - ns v dd =400v,... |
| Description |
700V CoolMOSa P7 Power Transistor
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| File Size |
1,120.75K /
13 Page |
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SamHop Microelectronics...
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| Part No. |
STM8820
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| OCR Text |
... v 470 m ohm v gs =10v , i d =0.7a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =64v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
101.38K /
7 Page |
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it Online |
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SeCoS Halbleitertechnol...
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| Part No. |
SSG07P06
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| OCR Text |
7a, -60v, r ds(o ) 40m ? p-ch enhancement mode power mosfet 19-apr-2017 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g rohs co... |
| Description |
P-Ch Enhancement Mode Power MOSFET
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| File Size |
692.40K /
4 Page |
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Infineon Technologies A...
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| Part No. |
IRLML0060TRPBF
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| OCR Text |
...? 78 92 v gs = 10v, i d = 2.7a v gs(th) gate threshold voltage 1.0 ??? 2.5 v v ds = v gs , i d = 25a i dss drain-to-source leakage current ??? ??? 20 a v ds = 60v, v gs = 0v ??? ??? 250 v ds = 60v,v gs = 0v,t ... |
| Description |
Industry-Standard Pinout
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| File Size |
297.32K /
10 Page |
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it Online |
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