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IXYS[IXYS Corporation]
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Part No. |
IXFR38N80Q2
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OCR Text |
...Tstg TL VISOL FC Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force 5 g Test Conditions...19A 2. See IXFK38N80Q2 data sheet for characteristic curves
IXYS reserves the right to change lim... |
Description |
Electrically Isolated Back Surface
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File Size |
564.48K /
5 Page |
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IRF[International Rectifier]
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Part No. |
IRLIB4343
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OCR Text |
...)
Max.
55 20 19 13 80 39 20 0.26 -40 to + 175
Units
V A
c
W W/C C
Thermal Resistance
RJC RJA Junction-to-Case
f
Para...19A VDS = 44V VGS = 10V ID = 19A See Fig. 6 and 19 VDD = 28V, VGS = 10V ID = 19A RG = 2.5 e VDS = VG... |
Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package DIGITAL AUDIO MOSFET From old datasheet system
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File Size |
227.93K /
7 Page |
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IRF[International Rectifier]
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Part No. |
IRHYS67134CM IRHYS63134CM
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OCR Text |
...on) IRHYS67134CM 100K Rads (Si) 0.09 IRHYS63134CM 300K Rads (Si) 0.09 ID 19A 19A
IRHYS67134CM 150V, N-CHANNEL
TECHNOLOGY
International Rectifier's R6 TM technology provides superior power MOSFETs for space applications. These devices... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
187.62K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHYS67130CM IRHYS63130CM
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OCR Text |
...on) IRHYS67130CM 100K Rads (Si) 0.042 IRHYS63130CM 300K Rads (Si) 0.042 ID 20A* 20A*
IRHYS67130CM 100V, N-CHANNEL
TECHNOLOGY
Internat...19A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 19A A VDS = 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C ... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
180.77K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHYB67134CM IRHYB63134CM
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OCR Text |
...on) IRHYB67134CM 100K Rads (Si) 0.09 IRHYB63134CM 300K Rads (Si) 0.09 ID 19A 19A
IRHYB67134CM 150V, N-CHANNEL
TECHNOLOGY
International Rectifier's R6 TM technology provides superior power MOSFETs for space applications. These devices... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
177.77K /
8 Page |
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Intersil, Corp. Intersil Corporation
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Part No. |
HUF76419S3S HUF76419P3 FN4669
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OCR Text |
0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Features
JEDEC TO-263AB
DRAIN (FLA...19A, VGS = 5V (Figure 9) ID = 18A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance J... |
Description |
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB From old datasheet system
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File Size |
332.27K /
9 Page |
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IRF[International Rectifier]
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Part No. |
IRHYB597Z30CM IRHYB67130CM IRHYB593Z30CM IRHYB63130CM
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OCR Text |
...on) IRHYB67130CM 100K Rads (Si) 0.042 IRHYB63130CM 300K Rads (Si) 0.042 ID 20A* 20A*
IRHYB67130CM 100V, N-CHANNEL
TECHNOLOGY
Low-Ohmi...19A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 19A A VDS = 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C ... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
170.63K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHN57250SE
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OCR Text |
...N57250SE 100K Rads (Si) RDS(on) 0.06 ID 31A
IRHN57250SE 200V, N-CHANNEL
5
TECHNOLOGY
SMD-1
International Rectifier's R5 TM ...19A A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 19A A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C... |
Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
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File Size |
173.24K /
8 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FRE9260R FRE9260D FRE9260H
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OCR Text |
0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
Package
TO-258AA
Features
* 19A, -200V, RDS(on) = 0.210 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(SI) Defined End ... |
Description |
19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA 19A/ -200V/ 0.210 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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File Size |
47.04K /
6 Page |
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Price and Availability
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